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MGFC39V7177A

Features: Class A operationInternally matched to 50(ohm) systemHigh output power P1dB = 8W (TYP.) @ f=7.1~7.7GHzHigh power gain GLP = 8 dB (TYP.) @ f=7.1~7.7GHzHigh power added efficiency P.A.E. = 28 % (TYP.) @ f=7.1~7.7GHzLow distortion [ item -51 ] IM3= -45 dBc(TYP.) @Po=28dBm S.C.L.Applicationi...

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MGFC39V7177A: Features: Class A operationInternally matched to 50(ohm) systemHigh output power P1dB = 8W (TYP.) @ f=7.1~7.7GHzHigh power gain GLP = 8 dB (TYP.) @ f=7.1~7.7GHzHigh power added efficiency P.A.E. = 2...

MGFC39V7177A Data Sheet

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Part Number:
MGFC39V7177A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Class A operation
Internally matched to 50(ohm) system
High output power
    P1dB = 8W (TYP.) @ f=7.1~7.7GHz
High power gain
    GLP = 8 dB (TYP.) @ f=7.1~7.7GHz
High power added efficiency
    P.A.E. = 28 % (TYP.) @ f=7.1~7.7GHz
Low distortion [ item -51 ]
    IM3= -45 dBc(TYP.) @Po=28dBm S.C.L.


Application

item 01 : 7.1~7.7 GHz band power amplifier
item 51 : 7.1~7.7 GHz band digital radio communication


Specifications

Symbol
Parameter
Ratings
Unit
VGDO
 Gate to drain voltage
-15
V
VGSO
 Gate to source voltage
-15
V
ID
 Drain current
7.5
A
IGR
 Reverse gate current
-20
mA
IGF
 Forward gate current
42
mA
PT
 Total power dissipation *1
42.8
W
Tch
 Channel temperature
175
deg.C
Tstg
 Storage temperature
-65/+175
deg.C



Description

The MGFC39V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 ~ 7.7 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.


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