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MGFC41V5964

Features: ·Internally matched to 50ohm system·High output power·P1dB = 12W (TIP.) @ f=5.9 - 6.4 Hz·High power gain·GLP = 9.5 dB (TYP.) @ f=5.9 - 6.4 GHz·High power added efficiency·Eadd = 33 % (TYP.) @ f=5.9 - 6.4 GHz·Low Distortion[Item-51]·IM3=-45 dBc(TYP.)@Po=30dBm S.C.L.Application·5.9 - 6.4GH...

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SeekIC No. : 004419879 Detail

MGFC41V5964: Features: ·Internally matched to 50ohm system·High output power·P1dB = 12W (TIP.) @ f=5.9 - 6.4 Hz·High power gain·GLP = 9.5 dB (TYP.) @ f=5.9 - 6.4 GHz·High power added efficiency·Eadd = 33 % (TYP....

MGFC41V5964 Data Sheet

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Part Number:
MGFC41V5964
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Internally matched to 50ohm system
·High output power
·P1dB = 12W (TIP.) @ f=5.9 - 6.4 Hz
·High power gain
·GLP = 9.5 dB (TYP.) @ f=5.9 - 6.4 GHz
·High power added efficiency
·Eadd = 33 % (TYP.) @ f=5.9 - 6.4 GHz
·Low Distortion[Item-51]
·IM3=-45 dBc(TYP.)@Po=30dBm S.C.L.


Application

·5.9 - 6.4GHz band amplifiers


Specifications

Parameter
Symbol
Ratings
Unit
Gate to drain voltage
VGDO
-15
V
Gate to source voltage
VGSO
-15
V
Drain current
ID
12
A
Reverse gate current
IGR
-30
mA
Forward gate current
IGF
63
mA
Total power dissipation *1
PT
53.6
W
Channel temperature
Tch
175
deg.C
Storage temperature
Tstg
65 /+175
deg.C



Description

The MGFC41V5964 is an internally impedence matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high raliability.




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