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MGFC39V3436

Features: ·Class A operation·Internally matched to 50(ohm) system·High output power·P1dB = 8W (TYP.) @ f=3.4 - 3.6 GHz·High power gain·GLP = 11 dB (TYP.) @ f=3.4 - 3.6GHz·High power added efficiency·P.A.E. = 32 % (TYP.) @ f=3.4 - 3.6GHz·Low distortion [item -51]·IM3=-45dBc(Typ.) @Po=28dBm S.C.L.Ap...

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SeekIC No. : 004419867 Detail

MGFC39V3436: Features: ·Class A operation·Internally matched to 50(ohm) system·High output power·P1dB = 8W (TYP.) @ f=3.4 - 3.6 GHz·High power gain·GLP = 11 dB (TYP.) @ f=3.4 - 3.6GHz·High power added efficiency...

MGFC39V3436 Data Sheet

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Part Number:
MGFC39V3436
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

·Class A operation
·Internally matched to 50(ohm) system
·High output power
·P1dB = 8W (TYP.) @ f=3.4 - 3.6 GHz
·High power gain
·GLP = 11 dB (TYP.) @ f=3.4 - 3.6GHz
·High power added efficiency
·P.A.E. = 32 % (TYP.) @ f=3.4 - 3.6GHz
·Low distortion [item -51]
·IM3=-45dBc(Typ.) @Po=28dBm S.C.L.




Application

·item 01 : 3.4 - 3.6 GHz band power amplifier
·item 51 : 3.4 - 3.6 GHz band digital ratio communication




Specifications

Parameter
Symbol
Ratings
Unit
Gate to drain voltage
VGDO
-15
V
Gate to source voltage
VGSO
-15
V
Drain current
ID
7.5
A
Reverse gate current
IGR
-20
mA
Forward gate current
IGF
42
mA
Total power dissipation *1
PT
42.8
W
Channel temperature
Tch
175
deg.C
Storage temperature
Tstg
65 /+175
deg.C





Description

The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.






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