Features: ·Low noise figure @ f=12GHz NFmin. = 0.6dB (Typ.)·High associated gain @ f=12GHz Gs = 11.5dB (Typ.)ApplicationS to Ku band low noise amplifiersSpecifications Symbol Parameter Ratings Unit VGDOVGSOIDPTTchTstg Gate to drain voltageGate to source voltageDrain currentTo...
MGF4931AM: Features: ·Low noise figure @ f=12GHz NFmin. = 0.6dB (Typ.)·High associated gain @ f=12GHz Gs = 11.5dB (Typ.)ApplicationS to Ku band low noise amplifiersSpecifications Symbol Parameter R...
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Symbol |
Parameter |
Ratings |
Unit |
VGDO VGSO ID PT Tch Tstg |
Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature |
-4 -4 IDSS 50 125 -55 to +125 |
V V mA mW C C |
The MGF4931AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers.The 4pin flat lead package is small-thin size, and offers high cost performance.