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Index K : KM6164002,KM6164000B,KM416C1004C,
KM6164002
Vendor:Other Category:Other
The KM6164002 is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The KM6164002 uses 16 common input and output lines and has an output enable pin which operates faster than a...KM6164000B
Vendor:Other Category:Other
The KM616V4000B families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and small package types for user flexibility of system design. The fam...KM6161002CLI-12
Vendor:Other Category:Other
The KM6161002CLI-12 is designed as one kind of 134,217,728 bits synchronous high data rate Dynamic RAM that is organized as 4 x 4,194,304 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. ...KM6161002C
Vendor:Other Category:Other
The KM6161002C is a kind of 1,048,576-bit high speed static random access memory organized as 65,536 words by 16 bits. The KM6161002C uses 16 common input and output lines and has an output enable pin which operates fast...KM6161002BI
Vendor:Other Category:Other
The KM6161002B is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The KM6161002B uses 16 common input and output lines and has at output enable pin which operates faster than...KM6161002B
Vendor:Other Category:Other
The KM6161002B is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The KM6161002B uses 16 common input and output lines and has at output enable pin which operates faster than ...KM6161002A
Vendor:Other Category:Other
The KM6161002A is a kind of 1,048,576-bit high speed static random access memory organized as 65,536 words by 16 bits. The KM6161002A uses 16 common input and output lines and has an output enable pin which operates fast...KM611001L
Vendor:Other Category:Other
The KM611001/L is a 1,048,576-bit high-speed Static Random Access Memory organized as 1,048,576 words by 1 bit. The KM611001/L has separate input and output lines for fast read and write access. The device is fabricated ...KM611001
Vendor:Other Category:Other
The KM611001/L is a 1,048,576-bit high-speed Static Random Access Memory organized as 1,048,576 words by 1 bit. The KM611001/L has separate input and output lines for fast read and write access. The device is fabricated ...KM50-1G
Vendor:Other Category:Other
Thermal Resistance 4.80KM50-1G Thermal resistance value is based on a 75C rise in natural convectionKM48V8104C
Vendor:Other Category:Other
This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs KM48V8104C. Extended Data Out Mode KM48V8104C offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.)...KM48V8104B
Vendor:Other Category:Other
This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs KM48V8104B. Extended Data Out Mode KM48V8104B offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.)...KM48V8004C
Vendor:Other Category:Other
This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs KM48V8004C. Extended Data Out Mode KM48V8004C offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.)...KM48V8004B
Vendor:Other Category:Other
This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs KM48V8004B. Extended Data Out Mode KM48V8004B offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.)...KM48V2100B
Vendor:Other Category:Other
This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs KM48V2100B. Fast Page Mode KM48V2100B offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cy...KM48V2000B
Vendor:Other Category:Other
This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs KM48V2000B. Fast Page Mode KM48V2000B offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cy...KM48S8030D
Vendor:Other Category:Other
The KM48S8030D is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycl...KM48S8030C
Vendor:Other Category:Other
KM48S16030B
Vendor:Other Category:Other
KM48S16030AT-G
Vendor:Other Category:Other
The KM48S16030AT-G is designed as one kind of 134,217,728 bits synchronous high data rate Dynamic RAM that is organized as 4 x 4,194,304 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. R...KM48S16030AT
Vendor:Other Category:Other
The KM48S16030AT is one member of KM48S16030 family. The KM48S16030 is 134,217,728 bits synchronous high datarate Dynamic RAM organized as 4 x 4,194,304 words by 8 bits,fabricated with SAMSUNGs high performance CMOS tech...KM48S16030A
Vendor:Other Category:Other
KM48S16030
Vendor:Other Category:Other
KM48C8104B
Vendor:Other Category:Other
This KM48C8104B is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access ti...KM48C8004B
Vendor:Other Category:Other
This KM48C8004B is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access ti...KM48C2100B
Vendor:Other Category:Other
This KM48C2100B is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref...KM48C2000B
Vendor:Other Category:Other
This KM48C2000B is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref...KM44V1000D
Vendor:Other Category:Other
This KM44V1000D is a family of 1,048,576 x 4bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5V or +3.3V), access time (-5, -6 or -...KM44S32030B
Vendor:Other Category:Other
The KM44S32030B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cy...KM44S32030
Vendor:Other Category:Other
The KM44S32030 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cyc...KM44L32031BT-G(F)Z/Y/0
Vendor:Other Category:Other
The KM44L32031BT-G(F)Z/Y/0 belongs to 128Mb seriers which are DDR SDRAM specification version 0.61, changed from the earlier version. If you want to know the history of this IC, please go to our website for detail imform...KM44C4105C
Vendor:Other Category:Other
This KM44C4105C is a family of 4,194,304 x 4 bit Quad CAS with Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Ref...KM44C4103C
Vendor:Other Category:Other
This KM44C4103C is a family of 4,194,304 x 4 bit Quad CAS with Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle (2K Ref. or 4K Ref.), access tim...KM44C4005C
Vendor:Other Category:Other
This KM44C4005C is a family of 4,194,304 x 4 bit Quad CAS with Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode KM44C4005C offers high speed random access of memory cells within the same row, so called Hyper Pag...KM44C4003C
Vendor:Other Category:Other
This is a family of 4,194,304 x 4 bit Quad CAS with Fast Page Mode CMOS DRAMs KM44C4003C. Fast Page Mode KM44C4003C offers high speed random access of memory cells within the same row. Refresh cycle (2K Ref. or 4K Ref.),...KM44C4000C
Vendor:Other Category:Other
The KM44C4000C is a kind of 4,194,304*4 bit fast page mode CMOS DRAM. Fast Page Mode offers high speed random access of memory cells within the same row. KM44C4000C is fabricated using Samsung¢s advanced CMOS proces...KM44C256D
Vendor:Other Category:Other
The KM44C256D is a kind of 262,144*4 CMOS DRAM (dynamic random access memory). Fast Page Mode offers high speed random access of memory cells within the same row. The KM44C256D is fabricated using Samsung's advanced sili...KM44C256C
Vendor:Other Category:Other
The KM44C256C is a kind of CMOS high speed 262,144*4 dynamic random access memory. The design is optimized for high speed, high performance applications such as mini computers, graphics and high performance microprocess...KM44C256BL
Vendor:Other Category:Other
The features of KM440256BL can be summarized as (1)fast page mode operation; (2)CAS-belore-RAS refresh capebility; (3)RAS-only and hidden refresh capablility; (4)TTL compatible inpute and output; (5)early write or output...KM44C256B
Vendor:Other Category:Other
The KM44C256B is a kind of CMOS high speed 262,144*4 dynamic random access memory. The design is optimized for high speed, high performance applications such as mainframes and mini computers, graphics and high performanc...KM44C256A
Vendor:Other Category:Other
The KM44C256A is a kind of CMOS high speed 262,144*4 dynamic random access memory. The design is optimized for high speed, high performance applications such as mainframes and mini computers, graphics and high performanc...KM44C1000D
Vendor:Other Category:Other
This is a family of 1,048,576 x 4bit Fast Page Mode CMOS DRAMs KM44C1000D. Fast Page Mode KM44C1000D offers high speed random access of memory cells within the same row. Power supply voltage (+5V or +3.3V), access time (...KM-4457P3C
Vendor:Other Category:Other
KM-4457P3C Made with NPNsllicon phototransistor chips.KM-4457F3C
Mfg:. Pack:. D/C:07+ Vendor:Other Category:Other
FKM-4457F3C 3Made with Gallium Arsehide Infrared Emitting diodes.KM432S2030C
Vendor:Other Category:Other
The KM432S2030C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycl...KM428C256-6
Vendor:Other Category:Other
The KM428C256-6 is one member of the KM428C256 family which is designed as the 1,048,576 x 16 bit extended data out CMOS DRAMs. This device CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthe...KM428C256
Vendor:Other Category:Other
The KM428C256 is a CMOS 256K*8 bit dual port DRAM. It includes a 256K*8 dynamic random acess memory (RAM) port and 512*8 static serial access memory (SAM) port. The RAM and SAM ports operate asynchronously except during ...KM4270
Mfg:519 Pack:FSC Vendor:Other Category:Other
The KM4270 is a dual ultra-low cost, low power,voltage feedback amplifier. At 5V, the KM4270 uses only 160A of supply current per amplifier and is designed to operate from a supply range of 2.5V to 5.5V. The input voltag...KM424C64-10
Vendor:Other Category:Other
The KM424C64-10 is one member of the KM424C64 family which is designed as the general purpose PWM boost converter that can be used in (1)3.3V to 5V, 5V to 12V conversion; (2)Distributed Power; (3)Set-Top Boxes; (4)DSL Mo...KM4216C258
Vendor:Other Category:Other
The Samsung KM4216C258 is a CMOS 256K x 16 bit Dual Port DRAM. It consists of a 256K x 16 dynamic random access memory (RAM) port and 512 x 16 static serial access memory (SAM) port.The RAM and SRAM port operate asynchro...KM4216C256
Vendor:Other Category:Other
The KM4216C256 is designed as the 262,144 x 16 bit extended data out CMOS DRAMs. This device CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L...KM4212
Vendor:Other Category:Other
The KM4212 is an ultra-low power, low cost, voltage feedback amplifier. The KM4212 uses only 70A of supply current and is designed to operate on +2.7V, +5V, or ±2.5V supplies. The input voltage range extends 300mV below ...KM4211
Vendor:Other Category:Other
The KM4211 is a dual ultra-low power, low cost, voltage feedback amplifier. The KM4211 uses only 208A of supply current per amplifier and is designed to operate from 2.5V to 5.5V or ±1.25V to ±2.75V supplies. The input v...KM4210
Mfg:FDS Pack:SMD-8 D/C:09+ Vendor:Other Category:Other
The KM4210 is a dual, low power, low cost, voltage feedback amplifier. The KM4210 uses only 505µA of supply current per amplifer, and is designed to operate on +2.7V, +5V, or ±2.5V supplies. The input voltage range...KM4200
Mfg:4674 Pack:FSC Vendor:Other Category:Other
The KM4200 is a dual, low cost, voltage feedback amplifier. This amplifier is designed to operate on +2.7V, +5V, or ±2.5V supplies. The input voltage range extends 300mV below the negative rail and 1.2V below the positiv...KM41V4000D
Vendor:Other Category:Other
This is a family of 4,194,304 x 1bit Fast Page Mode CMOS DRAMs KM41V4000D. Fast Page Mode KM41V4000D offers high speed random access of memory cells within the same row. Power supply voltage (+5V or +3.3V), access time (...KM41C4000D
Vendor:Other Category:Other
This is a family of 4,194,304 x 1bit Fast Page Mode CMOS DRAMs KM41C4000D. Fast Page Mode KM41C4000D offers high speed random access of memory cells within the same row. Power supply voltage (+5V or +3.3V), access time (...KM418RD8AC(D)
Vendor:Other Category:Other
Figure 2 is a block diagram of the 128/144 Mbit Direct RDRAM KM418RD8AC(D). KM418RD8AC(D) consists of two major blocks: a "core" block built from banks and sense amps similar to those found in other types of DRAM, and a ...KM416V4104C
Vendor:Other Category:Other
This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs KM416V4104C. Extended Data Out Mode KM416V4104C offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Re...KM416V4104B
Vendor:Other Category:Other
This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs KM416V4104B. Extended Data Out Mode KM416V4104B offers high peed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref...KM416V4100C
Vendor:Other Category:Other
This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs KM416V4100C. Fast Page Mode KM416V4100C offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time...KM416V4100B
Vendor:Other Category:Other
This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs KM416V4100B. Fast Page Mode KM416V4100B offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time...KM416V4004C
Vendor:Other Category:Other
This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs KM416V4004C. Extended Data Out Mode KM416V4004C offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Re...KM416V4004B
Vendor:Other Category:Other
This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs KM416V4004B. Extended Data Out Mode KM416V4004B offers high peed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref...KM416V4000C
Vendor:Other Category:Other
This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs KM416V4000C. Fast Page Mode KM416V4000C offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time...KM416V4000B
Vendor:Other Category:Other
This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs KM416V4000B. Fast Page Mode KM416V4000B offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time...KM416V256D
Vendor:Other Category:Other
This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs KM416V256D. Fast Page Mode KM416V256D offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), access time...KM416V254D
Vendor:Other Category:Other
This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs KM416V254D. Extended Data Out Mode KM416V254D offers high speed random access of memory cells within the same row. Power supply voltage(+5.0V or +3.3...KM416V1204C
Vendor:Other Category:Other
This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs KM416V1204C. Extended Data Out Mode KM416V1204C offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power su...KM416V1204BJ
Vendor:Other Category:Other
This is a family of 1,048,576 x16 bit extended data out CMOS DRAMs KM416V1204BJ. dxtended data out mode offers high speed random access of memory cells within the same row, so called hyper page mode. power supply voltage...KM416V1200C
Vendor:Other Category:Other
This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs KM416V1200C. Fast Page Mode KM416V1200C offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh...KM416V1200B
Vendor:Other Category:Other
This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs KM416V1200B. Fast Page Mode KM416V1200B offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh...KM416V1004C
Vendor:Other Category:Other
This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs KM416V1004C. Extended Data Out Mode KM416V1004C offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power su...KM416V1000C
Vendor:Other Category:Other
This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs KM416V1000C. Fast Page Mode KM416V1000C offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh...KM416V1000B
Vendor:Other Category:Other
This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs KM416V1000B. Fast Page Mode KM416V1000B offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh...KM416S8030BN
Vendor:Other Category:Other
The KM416S8030B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise c...KM416S8030B
Vendor:Other Category:Other
The KM416S8030B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise c...KM416S8030
Vendor:Other Category:Other
The KM416S8030 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cy...KM416S4030C
Vendor:Other Category:Other
The KM416S4030C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG ¢s high performance CMOS technology. Synchronous design allows precise c...KM416S4030B
Vendor:Other Category:Other
The KM416S4030B is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cy...KM416S1120D
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
The KM416S1120D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycl...KM416S1021C
Vendor:Other Category:Other
The KM416S1021C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycl...KM416RD8AS
Vendor:Other Category:Other
KM416RD8AC(D)
Vendor:Other Category:Other
Figure 2 is a block diagram of the 128/144 Mbit Direct RDRAM KM416RD8AC(D). KM416RD8AC(D) consists of two major blocks: a "core" block built from banks and sense amps similar to those found in other types of DRAM, and a ...KM416C4104C
Vendor:Other Category:Other
This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs KM416C4104C. Extended Data Out Mode KM416C4104C offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Re...KM416C4100C
Vendor:Other Category:Other
This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs KM416C4100C. Fast Page Mode KM416C4100C offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time...KM416C4100B
Vendor:Other Category:Other
This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs KM416C4100B. Fast Page Mode KM416C4100B offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time...KM416C4004C
Vendor:Other Category:Other
This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs KM416C4004C. Extended Data Out Mode KM416C4004C offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Re...KM416C4000C
Vendor:Other Category:Other
This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs KM416C4000C. Fast Page Mode KM416C4000C offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time...KM416C4000B
Vendor:Other Category:Other
This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs KM416C4000B. Fast Page Mode KM416C4000B offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time...KM416C256D
Vendor:Other Category:Other
This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs KM416C256D. Fast Page Mode KM416C256D offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), access time...KM416C256BJ-6
Vendor:Other Category:Other
The KM416C256BJ-6 is designed as one kind of 262,144 x 16 bit Fast Page Mode CMOS DRAM device that offers high speed random access of memory cells within the same row. And this device is fabricated using Samsung's advanc...KM416C254D/DL
Vendor:Other Category:Other
The KM416C254D/DL is one member of the KM428C254 family which is designed as the 262,144 x 16 bit extended data out CMOS DRAMs. This device CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthe...KM416C254D
Vendor:Other Category:Other
This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs KM416C254D. Extended Data Out Mode KM416C254D offers high speed random access of memory cells within the same row. Power supply voltage(+5.0V or +3.3...KM416C1204C
Vendor:Other Category:Other
This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs KM416C1204C. Extended Data Out Mode KM416C1204C offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power su...KM416C1200C
Vendor:Other Category:Other
This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs KM416C1200C. Fast Page Mode KM416C1200C offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh...KM416C1200BJ-L5
Vendor:Other Category:Other
The KM416C1200BJ-L5 is a kind of 1,048,576 x 16 bit fast page mode CMOS DRAM. It is fabricated using Samsung's advanced CMOS process to realize high band-width, low power consumption and high reliability. Fast page mode ...KM416C1200B
Vendor:Other Category:Other
This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs KM416C1200B. Fast Page Mode KM416C1200B offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh...KM416C1004C/C-L
Vendor:Other Category:Other
The KM416C1004C/C-L is one member of the KM428C256 family which is designed as the 1,048,576 x 16 bit extended data out CMOS DRAMs. This device CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Fu...KM416C1004C
Vendor:Other Category:Other
This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs KM416C1004C. Extended Data Out Mode KM416C1004C offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power su...