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KM41C4000D

Features: • Part Identification - KM41C4000D/D-L(5V, 1K Ref.) - KM41V4000D/D-L(3.3V, 1K Ref.)• Fast Page Mode operation• CAS-before-RAS refresh capability• RAS-only and Hidden refresh capability• Self-refresh capability (3.3V, L-ver only)• Fast parallel test mod...

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SeekIC No. : 004386075 Detail

KM41C4000D: Features: • Part Identification - KM41C4000D/D-L(5V, 1K Ref.) - KM41V4000D/D-L(3.3V, 1K Ref.)• Fast Page Mode operation• CAS-before-RAS refresh capability• RAS-only and Hidde...

KM41C4000D Data Sheet

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Part Number:
KM41C4000D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Part Identification - KM41C4000D/D-L(5V, 1K Ref.) - KM41V4000D/D-L(3.3V, 1K Ref.)
• Fast Page Mode operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (3.3V, L-ver only)
• Fast parallel test mode capability
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
• Common I/O using early write
• JEDEC Standard pinout
• Available in 26(20)-pin SOJ 300mil and TSOP(II) 300mil packages
• +5V±10% power supply(5V product)
• +3.3V±0.3V power supply(3.3V product)


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Rating
Unit
3.3V
5V
Voltage on any pin relative to VSS
VIN,VOUT
-0.5 to +4.6
-1 to +7.0
V
Voltage on VCC supply relative to VSS
TVCC
-0.5 to +4.6
-1 to +7.0
V
Storage Temperature
Tstg
-55 to +150
-55 to +150
°C
Power Dissipation
PD
600
600
mW
Short Circuit Output Current
IOS
50
50
mA
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation
should be restricted to the conditions as detailed in the operational  sections of this data sheet. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.


Description

This is a family of 4,194,304 x 1bit Fast Page Mode CMOS DRAMs KM41C4000D. Fast Page Mode KM41C4000D offers high speed random access of memory cells within the same row. Power supply voltage (+5V or +3.3V), access time (-5, -6 or -7), power consumption(Normal or Low power), and package type (SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, self-refresh operation is available in Low power version. This 4Mx1 Fast Page Mode DRAM family KM41C4000D is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power consumption and high reliability. KM41C4000D may be used as main memory for main frames and mini computers, personal computer and high performance
microprocessor systems.




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