KM44V1000D

Features:

- KM44C1000D/D-L(5V, 1K Ref.)
- KM44V1000D/D-L(3.3V, 1K Ref.)
• Fast Page Mode operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (3.3V, L-ver only)
• Fast parallel test mode capability
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
• Early write or output enable controlled write
• JEDEC Standard pinout
• Available in 26(20)-pin SOJ 300mil and TSOP(II)300mil packages
• Single +5V±10% power supply(5V product)
• Single +3.3V±0.3V power supply(3.3V product)


Pinout




Specifications

Parameter	Rating		SYMBOL	UNIT
	3.3V	5V
Voltage on any pin relative to Vss	-0.5 to +4.6	-1 to +7.0	VIN,VOUT	V
Voltage on VDD supply relative to Vss	-1.0 ~ 4.6	-1 to +7.0	VDD,VDDQ	V
Storage temperature	-55 ~ +150	-55 to+150	TSTG	°C
Power dissipation	600	600	PD	W
Short circuit current	50	50	IOS	mA

Description

This KM44V1000D is a family of 1,048,576 x 4bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5V or +3.3V), access time (-5, -6 or -7), power consumption(Normal or Low power), and package type (SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, self refresh operation is available in 3.3V Low power version. This 1Mx4 Fast Page Mode DRAM KM44V1000D family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as main memory for main frames and mini computers, personal computer and high performance microprocessor systems.