Position: Home  > All Categories> Integrated Circuits (ICs) > KM416RD8AS

KM416RD8AS

Features: Highest sustained bandwidth per DRAM device - 1.6GB/s sustained data transfer rate - Separate control and data buses for maximized efficiency - Separate row and column control buses for easy scheduling and highest performance - 32 banks: four transactions can take place simultaneously at...

product image

KM416RD8AS Picture
See larger image
SeekIC No. : 004386049 Detail

KM416RD8AS: Features: Highest sustained bandwidth per DRAM device - 1.6GB/s sustained data transfer rate - Separate control and data buses for maximized efficiency - Separate row and column control buses for ea...

KM416RD8AS Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
KM416RD8AS
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/20

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

 Highest sustained bandwidth per DRAM device
      - 1.6GB/s sustained data transfer rate
      - Separate control and data buses for maximized efficiency
      - Separate row and column control buses for easy scheduling and highest performance
      - 32 banks: four transactions can take place simultaneously at full bandwidth data rates
 Low latency features
      - Write buffer to reduce read latency
      - 3 precharge mechanisms for controller flexibility
      - Interleaved transactions
 Advanced power management:
      - Multiple low power states allows flexibility in powerconsumption versus time to transition to active state
      - Power-down self-refresh
 Organization: 1Kbyte pages and 32 banks, x 16
 Uses Rambus Signaling Level (RSL) for up to 800MHz operation


Specifications

Symbol Parameter Min Max Unit
VI,ABS Voltage applied to any RSL or CMOS pin with respect to Gnd - 0.3 VDD+0.3 V
VDD,ABS, VDDA,ABS Voltage on VDD and VDDA with respect to Gnd - 0.5 VDD+1.0 V
TSTORE Storage temperature - 50 100 °C



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Line Protection, Backups
BX0023
A20B-1008-0550
Cable Assemblies
CS1W-CN114
XW2Z-500T
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
View more