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KM48V8104C

Features: • Extended Data Out Mode operation• CAS-before-RAS refresh capability• RAS-only and Hidden refresh capability• Self-refresh capability (L-ver only)• Fast parallel test mode capability• LVTTL(3.3V) compatible inputs and outputs• Early Write or out...

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SeekIC No. : 004386121 Detail

KM48V8104C: Features: • Extended Data Out Mode operation• CAS-before-RAS refresh capability• RAS-only and Hidden refresh capability• Self-refresh capability (L-ver only)• Fast para...

KM48V8104C Data Sheet

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Part Number:
KM48V8104C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Extended Data Out Mode operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• Fast parallel test mode capability
• LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic SOJ and TSOP(II) packages
• +3.3V±0.3V power supply


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Value
Unit
Voltage on Any Pin Relative to VSS
VIN, VOUT
-0.5 to +4.6
V
Voltage on VDD Supply Relative to VSS
VCC
-0.5 to +4.6
V
Storage Temperature
TSTG
-55 ~ +150
°C
Power dissipation
PD
1
W
Short Circuit Output Current
IOS
50
mA



Description

This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs KM48V8104C. Extended Data Out Mode KM48V8104C offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 8Mx8 EDO Mode DRAM family KM48V8104C is fabricated using Samsung ¢s advanced CMOS process to realize high band-width, low power consumption and high reliability.




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