Features: • Part Identification - KM416C254D/DL (5V, 512 Ref.) - KM416V254D/DL (3.3V, 512 Ref.)• Extended Data Out Mode operation• 2 CAS Byte/Wrod Read/Write operation• CAS -before-RAS refresh capability•RAS -only and Hidden refresh capability• Self-refresh capa...
KM416V254D: Features: • Part Identification - KM416C254D/DL (5V, 512 Ref.) - KM416V254D/DL (3.3V, 512 Ref.)• Extended Data Out Mode operation• 2 CAS Byte/Wrod Read/Write operation• CAS -...
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Parameter |
Symbol |
Rating |
Unit | |
3.3V |
5V | |||
Voltage on any pin relative to VSS |
VIN,VOUT |
-0.5 to +4.6 |
-1 to +7.0 |
V |
Voltage on VCC supply relative to VSS |
TVCC |
-0.5 to +4.6 |
-1 to +7.0 |
V |
Storage Temperature |
Tstg |
-55 to +150 |
-55 to +150 |
°C |
Power Dissipation |
PD |
1 |
1 |
W |
Short Circuit Output Current |
IOS |
50 |
50 |
mA |
This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs KM416V254D. Extended Data Out Mode KM416V254D offers high speed random access of memory cells within the same row. Power supply voltage(+5.0V or +3.3V), Access time (-5,-6 or -7), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS -before-RAS refresh,RAS only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 256Kx16 EDO Mode DRAM family KM416V254D is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power consumption and high reliability. KM416V254D may be used as graphic memory unit for microcomputer, personal computer and portable machines.