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KM416V4104B

Features: • Part Identification - KM416V4004B/B-L(3.3V, 8K Ref.) - KM416V4104B/B-L(3.3V, 4K Ref.)• Extended Data Out Mode operation• 2 RAS Byte/Word Read/Write operation• RAS-before-RAS refresh capability• RAS-only and Hidden refresh capability• Fast parallel te...

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SeekIC No. : 004386072 Detail

KM416V4104B: Features: • Part Identification - KM416V4004B/B-L(3.3V, 8K Ref.) - KM416V4104B/B-L(3.3V, 4K Ref.)• Extended Data Out Mode operation• 2 RAS Byte/Word Read/Write operation• RAS...

KM416V4104B Data Sheet

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Part Number:
KM416V4104B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Part Identification - KM416V4004B/B-L(3.3V, 8K Ref.) - KM416V4104B/B-L(3.3V, 4K Ref.)
• Extended Data Out Mode operation
• 2 RAS Byte/Word Read/Write operation
• RAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Fast parallel test mode capability
• Self-refresh capability (L-ver only)
• LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic TSOP(II) packages
• +3.3V±0.3V power supply


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Rating
Units
Voltage on any pin relative to VSS
VIN,VOUT
-0.5 to +6.5
V
Voltage on VCC supply relative to VSS
VCC
-0.5 to +4.6
A
Storage Temperature
Tstg
-55 to +150
Power Dissipation
PD
1
W
Short Circuit Output Current
IOS
50
mA
* Permanent device damage may occur if " ABSOLUTE MAXIMUM  RATINGS"  are
   exceeded.  Functional  operation  should be  restricted  to  the  conditions as
   detailed in the operational sections of this data sheet. Exposure  to  absolute 
   maximum rating conditions for extended periods may affect device reliability.


Description

This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs KM416V4104B. Extended Data Out Mode KM416V4104B offers high peed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 EDO Mode DRAM family KM416V4104B is fabricated using Samsung ¢s advanced CMOS process to realize high band-width, low power consumption and high reliability.




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