KM6161002BI

Features:

• Fast Access Time 8,10,12ns(Max.)
• Low Power Dissipation
   Standby (TTL) : 50mA(Max.)
   (CMOS) : 10mA(Max.)
   Operating KM6161002B - 8 : 200 mA(Max.)
   KM6161002B - 10 : 195 mA(Max.)
   KM6161002B - 12 : 190 mA(Max.)
• Single 5.0V±10% Power Supply
• TTL Compatible Inputs and Outputs
• I/O Compatible with 3.3V Device
• Fully Static Operation
- No Clock or Refresh required
• Three State Outputs
• Center Power/Ground Pin Configuration
• Data Byte Control : LB : I/O1~ I/O8, UB : I/O9~ I/O16
• Standard Pin Configuration KM6161002BJ : 44-SOJ-400 KM6161002BT : 44-TSOP2-400F


Pinout




Specifications

Parameter		Rating	SYMBOL	UNIT
Voltage on Any Pin Relative to V SS		-0.5 to 7.0	IO	V
Voltage on VCC Supply Relative to VSS		-0.5 to 7.0	IFSM	V
Power Dissipation		1.0	VR	W
Storage Temperature		65 to 150	T j	°C
Operating Temperature	Commercial	0 to 70	TA	°C
	Industrial	-40 to 85

Description

 The KM6161002B is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The KM6161002B uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. Also it allows that lower and upper byte access by data byte control ( UB, LB). The device is fabricated using SAMSUNG¢s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The KM6161002B is packaged in a 400mil 44-pin plastic SOJ or TSOP2 forward.