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KM416C4000B

Features: • Part Identification- KM416C4000B(5.0V, 8K Ref.)- KM416C4100B(5.0V, 4K Ref.)• Fast Page Mode operation• 2CAS Byte/Word Read/Write operation• CAS-before-RAS refresh capability• RAS-only and Hidden refresh capability• Fast parallel test mode capability&...

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SeekIC No. : 004386042 Detail

KM416C4000B: Features: • Part Identification- KM416C4000B(5.0V, 8K Ref.)- KM416C4100B(5.0V, 4K Ref.)• Fast Page Mode operation• 2CAS Byte/Word Read/Write operation• CAS-before-RAS refresh...

KM416C4000B Data Sheet

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Part Number:
KM416C4000B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• Part Identification
- KM416C4000B(5.0V, 8K Ref.)
- KM416C4100B(5.0V, 4K Ref.)
• Fast Page Mode operation
• 2CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Fast parallel test mode capability
• TTL(5.0V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic TSOP(II) package
• +5.0V±10% power supply


Pinout

Connection Diagram


Specifications

Parameter Symbol Value Unit
Voltage on any pin relative to VSS VIN, VOUT -1.0 to +7.0 V
Voltage on VCC supply relative to VSS VCC, VCCQ -1.0 to +7.0 V
Storage temperature TSTG -55 ~ +150 °C
Power dissipation PD 1.0 W
Short circuit current IOS 50 mA

* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.




Description

This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs KM416C4000B. Fast Page Mode KM416C4000B offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 Fast Page Mode DRAM family KM416C4000B is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power consumption and high reliability.




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