Position: Home  > All Categories> Integrated Circuits (ICs) > KM416V4004B

KM416V4004B

Features: • Part Identification - KM416V4004B/B-L(3.3V, 8K Ref.) - KM416V4104B/B-L(3.3V, 4K Ref.)• Extended Data Out Mode operation• 2 RAS Byte/Word Read/Write operation• RAS-before-RAS refresh capability• RAS-only and Hidden refresh capability• Fast parallel te...

product image

KM416V4004B Picture
See larger image
SeekIC No. : 004386068 Detail

KM416V4004B: Features: • Part Identification - KM416V4004B/B-L(3.3V, 8K Ref.) - KM416V4104B/B-L(3.3V, 4K Ref.)• Extended Data Out Mode operation• 2 RAS Byte/Word Read/Write operation• RAS...

KM416V4004B Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
KM416V4004B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/20

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Part Identification - KM416V4004B/B-L(3.3V, 8K Ref.) - KM416V4104B/B-L(3.3V, 4K Ref.)
• Extended Data Out Mode operation
• 2 RAS Byte/Word Read/Write operation
• RAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Fast parallel test mode capability
• Self-refresh capability (L-ver only)
• LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic TSOP(II) packages
• +3.3V±0.3V power supply


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Rating
Units
Voltage on any pin relative to VSS
VIN,VOUT
-0.5 to +6.5
V
Voltage on VCC supply relative to VSS
VCC
-0.5 to +4.6
A
Storage Temperature
Tstg
-55 to +150
Power Dissipation
PD
1
W
Short Circuit Output Current
IOS
50
mA
* Permanent device damage may occur if " ABSOLUTE MAXIMUM  RATINGS"  are
   exceeded.  Functional  operation  should be  restricted  to  the  conditions as
   detailed in the operational sections of this data sheet. Exposure  to  absolute 
   maximum rating conditions for extended periods may affect device reliability.


Description

This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs KM416V4004B. Extended Data Out Mode KM416V4004B offers high peed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 EDO Mode DRAM family KM416V4004B is fabricated using Samsung ¢s advanced CMOS process to realize high band-width, low power consumption and high reliability.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Line Protection, Backups
BX0023
A20B-1008-0550
View more