DescriptionThe KM428C256-6 is one member of the KM428C256 family which is designed as the 1,048,576 x 16 bit extended data out CMOS DRAMs. This device CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 1Mx16...
KM428C256-6: DescriptionThe KM428C256-6 is one member of the KM428C256 family which is designed as the 1,048,576 x 16 bit extended data out CMOS DRAMs. This device CAS-before-RAS refresh, RAS-only refresh and Hi...
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The KM428C256-6 is one member of the KM428C256 family which is designed as the 1,048,576 x 16 bit extended data out CMOS DRAMs. This device CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung¢ s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.
Features of the KM428C256-6 are:(1)Single +3.3V±0.3V power supply (3.3V product);(2)Single +5V±10% power supply (5V product);(3)Available in plastic SOJ 400mil and TSOP(II) packages;(4)JEDEC Standard pinout;(5)Early Write or output enable controlled write;(6)TTL(5V)/LVTTL(3.3V) compatible inputs and outputs;(7)Self-refresh capability (L-ver only);(8)RAS-only and Hidden refresh capability;(9)CAS-before-RAS refresh capability;(10)2 CAS Byte/Word Read/Write operation.
The absolute maximum ratings of the KM428C256-6 can be summarized as:(1)Voltage on any pin relative to VSS: -0.5V to +4.6V (3.3V) or -1.0V to +7.0V (5V);(2)Voltage on VCC supply relative to VSS: -0.5V to +4.6V (3.3V) or -1.0V to +7.0V (5V);(3)Storage Temperature: -55 to +150 °C;(4)Power Dissipation: 1 W;(5)Short Circuit Output Current: 50 mA. If you want to know more information such as the electrical characteristics about the KM428C256-6, please download the datasheet in www.seekic.com or www.chinaicmart.com.