DescriptionThe KM6161002A is a kind of 1,048,576-bit high speed static random access memory organized as 65,536 words by 16 bits. The KM6161002A uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. KM6161002A is fabricated...
KM6161002A: DescriptionThe KM6161002A is a kind of 1,048,576-bit high speed static random access memory organized as 65,536 words by 16 bits. The KM6161002A uses 16 common input and output lines and has an outp...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: • Fast Access Time 8,10,12ns(Max.)• Low Power Dissipation Standby (TTL) : 50...
The KM6161002A is a kind of 1,048,576-bit high speed static random access memory organized as 65,536 words by 16 bits. The KM6161002A uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. KM6161002A is fabricated using SAMSUNG's advanced CMOS process. It is particularly suitable for use in high-density, high speed system applications.
There are some features of KM6161002A as follows: (1)fast access time: 12, 15, 20 ns (max); (2)low power dissipation; (3)single 5.0 V±10% power supply; (4)TTL compatible inputs and outputs; (5)I/O compatible with 3.3 V device; (6)dull static operation: no clock or refresh required; (7)three state outputs; (8)center power/ground pin configuration; (9)data byte control: LB: I/O1 to I/O8, UB: I/O9 to I/O16; (10)available in 400mil 44-pin plastic SOJ or TSOP2 forward package.
The following is about the maximum ratings of KM6161002A: (1)voltage on any pin relative to VSS, VIN,VOUT: -0.5 to +7.0 V; (2)voltage on VCC supply relative to VSS, VCC: -0.5 to +7.0 V; (3)storage temperature, Tstg: -65 to +150; (4)power dissipation, PD: 1 W; (5)commercial operating temperature, TA: 0 to 70; (6)industrial operating temperature, TA: -40 to 85.