Features: • Part Identification- KM48C8004B(5.0V, 8K Ref.)- KM48C8104B(5.0V, 4K Ref.)• Extended Data Out Mode operation• CAS-before-RAS refresh capability• RAS-only and Hidden refresh capability• Fast parallel test mode capability• TTL(5.0V) compatible inputs an...
KM48C8104B: Features: • Part Identification- KM48C8004B(5.0V, 8K Ref.)- KM48C8104B(5.0V, 4K Ref.)• Extended Data Out Mode operation• CAS-before-RAS refresh capability• RAS-only and Hidde...
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Features: · Part Identification- KM48C2000B/B-L (5V, 4K Ref.)- KM48C2100B/B-L (5V, 2K Ref.)- KM48V...
Features: · Part Identification- KM48C2000B/B-L (5V, 4K Ref.)- KM48C2100B/B-L (5V, 2K Ref.)- KM48V...
Features: • Part Identification- KM48C8004B(5.0V, 8K Ref.)- KM48C8104B(5.0V, 4K Ref.)•...
Parameter | Symbol | Rating | Unit |
Voltage on any pin relative to VSS | VIN, VOUT | -1.0 to +7.0 | V |
Voltage on VCC supply relative to VSS | VCC | -1.0 to +7.0 | V |
Storage temperature | TSTG | -55 ~ +150 | °C |
Power dissipation | PD | 1.0 | W |
Short circuit current | IOS | 50 | mA |
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
This KM48C8104B is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6), package type (SOJ or TSOPII) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.
This 8Mx8 EDO Mode DRAM family KM48C8104B is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power consumption and high reliability.