KM416V4100B

Features:

• Part Identification - KM416V4000B/B-L(3.3V, 8K Ref.) - KM416V4100B/B-L(3.3V, 4K Ref.)
• Fast Page Mode operation
• 2CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• Fast parallel test mode capability
• LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic TSOP(II) packages
• +3.3V±0.3V power supply


Pinout




Specifications

Parameter	Symbol	Rating	Unit
Voltage on any pin relative to VSS	VIN,VOUT	-0.5 to +6.5	V
Voltage on VCC supply relative to VSS	TVCC	-0.5 to +4.6	V
Storage Temperature	Tstg	-55 to +150	°C
Power Dissipation	PD	1	W
Short Circuit Output Current	IOS	50	mA

* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation
should be restricted to the conditions as detailed in the operational sections of this data sheet.  Exposure  to
absolute maximum rating conditions for extended periods may affect device reliability.


Description

This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs KM416V4100B. Fast Page Mode KM416V4100B offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 Fast Page Mode DRAM family KM416V4100B is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power consumption and high reliability.