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KM416V4104C

Features: • Part Identification- KM416V4004C/C-L(3.3V, 8K Ref.)- KM416V4104C/C-L(3.3V, 4K Ref.)• Extended Data Out Mode operation• 2 CAS Byte/Word Read/Write operation• CAS-before-RAS refresh capability• RAS-only and Hidden refresh capability• Fast parallel test...

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SeekIC No. : 004386073 Detail

KM416V4104C: Features: • Part Identification- KM416V4004C/C-L(3.3V, 8K Ref.)- KM416V4104C/C-L(3.3V, 4K Ref.)• Extended Data Out Mode operation• 2 CAS Byte/Word Read/Write operation• CAS-b...

KM416V4104C Data Sheet

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Part Number:
KM416V4104C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• Part Identification
- KM416V4004C/C-L(3.3V, 8K Ref.)
- KM416V4104C/C-L(3.3V, 4K Ref.)
• Extended Data Out Mode operation
• 2 CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Fast parallel test mode capability
• Self-refresh capability (L-ver only)
• LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic TSOP(II) packages
• +3.3V±0.3V power supply


Pinout

Connection Diagram


Specifications

Parameter Symbol Rating Unit
Voltage on any pin relative to VSS VIN, VOUT -0.5 to +4.6 V
Voltage on VCC supply relative to VSS VCC -0.5 to +4.6 V
Storage temperature TSTG -55 to +150 °C
Power dissipation PD 1.0 W
Short circuit current IOS 50 mA

Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability.




Description

This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs KM416V4104C. Extended Data Out Mode KM416V4104C offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 EDO Mode DRAM family KM416V4104C is fabricated using Samsung ¢s advanced CMOS process to realize high band-width, low power consumption and high reliability.




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