KM416RD8AC(D)

Features:

¨ Highest sustained bandwidth per DRAM device
      - 1.6GB/s sustained data transfer rate
      - Separate control and data buses for maximized efficiency
      - Separate row and column control buses for easy scheduling and highest performance
      - 32 banks: four transactions can take place simultaneously at full bandwidth data rates
¨ Low latency features
      - Write buffer to reduce read latency
      - 3 precharge mechanisms for controller flexibility
      - Interleaved transactions
¨ Advanced power management:
     - Direct RDRAM operates from a 2.5 volt supply
     - Multiple low power states allows flexibility in power consumption versus time to transition to active state
     - Power-down self-refresh
¨ Organization: 1Kbyte pages and 32 banks, x 16/18
     - x18 organization allows ECC configurations or increased storage/bandwidth
     - x16 organization for low cost applications
¨ Uses Rambus Signaling Level (RSL) for up to 800MHz operation

Specifications

Symbol	Parameter	Min	Max	Unit
VI,ABS	Voltage applied to any RSL or CMOS pin with respect to Gnd	- 0.3	VDD+0.3	V
VDD,ABS, VDDA,ABS	Voltage on VDD and VDDA with respect to Gnd	- 0.5	VDD+1.0	V
TSTORE	Storage temperature	- 50	100	°C

Description

Figure 2 is a block diagram of the 128/144 Mbit Direct RDRAM KM416RD8AC(D). KM416RD8AC(D) consists of two major blocks: a "core" block built from banks and sense amps similar to those found in other types of DRAM, and a Direct Rambus interface block which permits an external controller to access this core at up to 1.6GB/s.