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KM416C4104C

Features: • Part Identification- KM416C4004C(5.0V, 8K Ref.)- KM416C4104C(5.0V, 4K Ref.)• Extended Data Out Mode operation• 2 CAS Byte/Word Read/Write operation• CAS-before-RAS refresh capability• RAS-only and Hidden refresh capability• Fast parallel test mode ca...

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SeekIC No. : 004386047 Detail

KM416C4104C: Features: • Part Identification- KM416C4004C(5.0V, 8K Ref.)- KM416C4104C(5.0V, 4K Ref.)• Extended Data Out Mode operation• 2 CAS Byte/Word Read/Write operation• CAS-before-RA...

KM416C4104C Data Sheet

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Part Number:
KM416C4104C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Part Identification
- KM416C4004C(5.0V, 8K Ref.)
- KM416C4104C(5.0V, 4K Ref.)
• Extended Data Out Mode operation
• 2 CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Fast parallel test mode capability
• TTL(5.0V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic TSOP(II) package
• +5.0V±10% power supply


Pinout

Connection Diagram


Specifications

Parameter Symbol Value Unit
Voltage on any pin relative to VSS VIN, VOUT -1.0 to +7.0 V
Voltage on VCC supply relative to VSS VCC, VCCQ -1.0 to +7.0 V
Storage temperature TSTG -55 ~ +150 °C
Power dissipation PD 1.0 W
Short circuit current IOS 50 mA

* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.




Description

This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs KM416C4104C. Extended Data Out Mode KM416C4104C offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-5 or -6) are optional features of this family.
All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 EDO Mode DRAM family KM416C4104C is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power consumption and high reliability.




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