Features: • Part Identification- KM416C4004C(5.0V, 8K Ref.)- KM416C4104C(5.0V, 4K Ref.)• Extended Data Out Mode operation• 2 CAS Byte/Word Read/Write operation• CAS-before-RAS refresh capability• RAS-only and Hidden refresh capability• Fast parallel test mode ca...
KM416C4104C: Features: • Part Identification- KM416C4004C(5.0V, 8K Ref.)- KM416C4104C(5.0V, 4K Ref.)• Extended Data Out Mode operation• 2 CAS Byte/Word Read/Write operation• CAS-before-RA...
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Parameter | Symbol | Value | Unit |
Voltage on any pin relative to VSS | VIN, VOUT | -1.0 to +7.0 | V |
Voltage on VCC supply relative to VSS | VCC, VCCQ | -1.0 to +7.0 | V |
Storage temperature | TSTG | -55 ~ +150 | °C |
Power dissipation | PD | 1.0 | W |
Short circuit current | IOS | 50 | mA |
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs KM416C4104C. Extended Data Out Mode KM416C4104C offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-5 or -6) are optional features of this family.
All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 EDO Mode DRAM family KM416C4104C is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power consumption and high reliability.