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KM416C254D

Features: • Part Identification - KM416C254D/DL (5V, 512 Ref.) - KM416V254D/DL (3.3V, 512 Ref.)• Extended Data Out Mode operation• 2 CAS Byte/Wrod Read/Write operation• CAS -before-RAS refresh capability•RAS -only and Hidden refresh capability• Self-refresh capa...

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SeekIC No. : 004386038 Detail

KM416C254D: Features: • Part Identification - KM416C254D/DL (5V, 512 Ref.) - KM416V254D/DL (3.3V, 512 Ref.)• Extended Data Out Mode operation• 2 CAS Byte/Wrod Read/Write operation• CAS -...

KM416C254D Data Sheet

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Part Number:
KM416C254D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Part Identification - KM416C254D/DL (5V, 512 Ref.) - KM416V254D/DL (3.3V, 512 Ref.)
• Extended Data Out Mode operation
• 2 CAS Byte/Wrod Read/Write operation
• CAS -before-RAS refresh capability
•RAS -only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in 40-pin SOJ 400mil and 44(40)-pin packages
• Triple +5V±10% power supply (5V product)
• Triple +3.3V±0.3V power supply (3.3V product)


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Rating
Unit
3.3V
5V
Voltage on any pin relative to VSS
VIN,VOUT
-0.5 to +4.6
-1 to +7.0
V
Voltage on VCC supply relative to VSS
TVCC
-0.5 to +4.6
-1 to +7.0
V
Storage Temperature
Tstg
-55 to +150
-55 to +150
°C
Power Dissipation
PD
1
1
W
Short Circuit Output Current
IOS
50
50
mA
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation
   should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to   
   absolute maximum rating conditions for extended periods may affect device reliability.


Description

This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs KM416C254D. Extended Data Out Mode KM416C254D offers high speed random access of memory cells within the same row. Power supply voltage(+5.0V or +3.3V), Access time (-5,-6 or -7), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS -before-RAS refresh,RAS only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 256Kx16 EDO Mode DRAM family KM416C254D is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power consumption and high reliability. KM416C254D may be used as graphic memory unit for microcomputer, personal computer and portable machines.




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