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KM416V4100C

Features: • Part Identification - KM416V4000C/C-L(3.3V, 8K Ref.) - KM416V4100C/C-L(3.3V, 4K Ref.)• Fast Page Mode operation• 2CAS Byte/Word Read/Write operation• CAS-before-RAS refresh capability• RAS-only and Hidden refresh capability• Self-refresh capability (...

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SeekIC No. : 004386071 Detail

KM416V4100C: Features: • Part Identification - KM416V4000C/C-L(3.3V, 8K Ref.) - KM416V4100C/C-L(3.3V, 4K Ref.)• Fast Page Mode operation• 2CAS Byte/Word Read/Write operation• CAS-before-R...

KM416V4100C Data Sheet

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Part Number:
KM416V4100C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Part Identification - KM416V4000C/C-L(3.3V, 8K Ref.) - KM416V4100C/C-L(3.3V, 4K Ref.)
• Fast Page Mode operation
• 2CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• Fast parallel test mode capability
• LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic TSOP(II) packages
• +3.3V±0.3V power supply


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Rating
Unit
Voltage on any pin relative to VSS
VIN,VOUT
-0.5 to +4.6
V
Voltage on VCC supply relative to VSS
TVCC
-0.5 to +4.6
V
Storage Temperature
Tstg
-55 to +150
°C
Power Dissipation
PD
1
W
Short Circuit Output Current
IOS Address
50
mA
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are  exceeded.
Functional operation should be restricted to the conditions as detailed in the operational
sections of this data sheet. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.


Description

This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs KM416V4100C. Fast Page Mode KM416V4100C offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 Fast Page Mode DRAM family KM416V4100C is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power consumption and high reliability.




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