Features: ·Part Identification - KM416C256D/DL (5V, 512K Ref.) - KM416V256D/DL (3.3V, 512K Ref.)·Fast Page Mode operation·2CAS Byte/Wrod Read/Write operation·CAS -before-RAS refresh capability·RAS -only and Hidden refresh capability·Self-refresh capability (L-ver only)·TTL(5V)/LVTTL(3.3V) compatib...
KM416C256D: Features: ·Part Identification - KM416C256D/DL (5V, 512K Ref.) - KM416V256D/DL (3.3V, 512K Ref.)·Fast Page Mode operation·2CAS Byte/Wrod Read/Write operation·CAS -before-RAS refresh capability·RAS -...
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Parameter |
Symbol |
Rating |
Unit | |
3.3V |
5V | |||
Voltage on any pin relative to VSS |
VIN,VOUT |
-0.5 to +4.6 |
-1 to +7.0 |
V |
Voltage on VCC supply relative to VSS |
TVCC |
-0.5 to +4.6 |
-1 to +7.0 |
V |
Storage Temperature |
Tstg |
-55 to +150 |
-55 to +150 |
·· |
Power Dissipation |
PD |
1 |
1 |
W |
Short Circuit Output Current |
IOS |
50 |
50 |
mA |
This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs KM416C256D. Fast Page Mode KM416C256D offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), access time (-5,-6,-7), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS -before-RAS refresh, RAS -only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 256Kx16 fast page mode DRAM family KM416C256D is fabricated using Samsung's advanced CMOS process to realize high band-width, low power consumption and high reliability. KM416C256D may be used as graphic memory unit for microcomputer, personal computer and portable machines.