DescriptionThe KM44C256C is a kind of CMOS high speed 262,144*4 dynamic random access memory. The design is optimized for high speed, high performance applications such as mini computers, graphics and high performance microprocessor computers. Besides, the KM44C256C is fabricated using Samsung's a...
KM44C256C: DescriptionThe KM44C256C is a kind of CMOS high speed 262,144*4 dynamic random access memory. The design is optimized for high speed, high performance applications such as mini computers, graphics a...
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Features: - KM44C1000D/D-L(5V, 1K Ref.)- KM44V1000D/D-L(3.3V, 1K Ref.)• Fast Page Mode opera...
The KM44C256C is a kind of CMOS high speed 262,144*4 dynamic random access memory. The design is optimized for high speed, high performance applications such as mini computers, graphics and high performance microprocessor computers. Besides, the KM44C256C is fabricated using Samsung's advanced silicon gate CMOS process.
There are some features of KM44C256C as follows: (1)fast page mode capability; (2)CAS-before-RAS refresh capability; (3)RAS-only and hidden refresh capability; (4)TTL compatible inputs and outputs; (5)early write or output enable controlled write; (6)single +5 V±10% power supply; (7)512cycle/8ms refresh; (8)JEDEC standard pinout; (9)available in plastic DIP, SOJ, ZIP, TSOP(I) and TSOP(II) packages; (10) power dissipation: 5.5 mW when standby and 385 mW when active (60 ms).
The following is about the maximum ratings of KM44C256C: (1)voltage on any pin relative to VSS, VIN or VOUT: -1 to +7.0 V; (2)voltage on VCC supply relative to VSS, VCC: -1 to +7.0 V; (3)storage temperature, Tstg: -55 to +150; (4)power dissipation, PD: 600 mW; (5)short circuit output current, IOS: 50 mA.