Features: • Extended Data Out Mode operation• CAS-before-RAS refresh capability• RAS-only and Hidden refresh capability• Self-refresh capability (L-ver only)• Fast parallel test mode capability• LVTTL(3.3V) compatible inputs and outputs• Early Write or out...
KM48V8104B: Features: • Extended Data Out Mode operation• CAS-before-RAS refresh capability• RAS-only and Hidden refresh capability• Self-refresh capability (L-ver only)• Fast para...
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Features: · Part Identification- KM48C2000B/B-L (5V, 4K Ref.)- KM48C2100B/B-L (5V, 2K Ref.)- KM48V...
Features: · Part Identification- KM48C2000B/B-L (5V, 4K Ref.)- KM48C2100B/B-L (5V, 2K Ref.)- KM48V...
Features: • Part Identification- KM48C8004B(5.0V, 8K Ref.)- KM48C8104B(5.0V, 4K Ref.)•...
Parameter |
Symbol |
Value |
Unit |
Voltage on Any Pin Relative to VSS |
VIN, VOUT |
-0.5 to +6.5 |
V |
Voltage on VCCSupply Relative to VSS |
VCC |
-0.5 to +4.6 |
V |
Storage Temperature |
TSTG |
-55 ~ +150 |
°C |
Power dissipation |
PD |
1 |
W |
Short Circuit Output Current |
IOS |
50 |
mA
|
This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs KM48V8104B. Extended Data Out Mode KM48V8104B offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 8Mx8 EDO Mode DRAM family KM48V8104B is fabricated using Samsung ¢s advanced CMOS process to realize high band-width, low power consumption and high reliability.