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Index K : K6F2008V2E,K6F2008U2E,K4S643232F-TI,
K6F2008V2E
Mfg:12000 Pack:SAMSUNG Vendor:Other Category:Other
The K6F2008V2E families are fabricated by SAMSUNG¢s advanced Full CMOS process technology. The families support industrial temperature ranges for user flexibility of system design. The families also supports low dat...K6F2008U2E
Mfg:12000 Pack:SAMSUNG Vendor:Other Category:Other
The K6F2008U2E families are fabricated by SAMSUNG's advanced Full CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. T...K6F2008T2E
Mfg:12000 Pack:SAMSUNG Vendor:Other Category:Other
The K6F2008T2E families are fabricated by SAMSUNG¢s advanced Full CMOS process technology. The families support industrial temperature ranges for user flexibility of system design. The families also supports low dat...K6F2008S2E
Mfg:12000 Pack:SAMSUNG Vendor:Other Category:Other
The K6F2008S2E families are fabricated by SAMSUNG's advanced Full CMOS process technology. The families support Various operating temperature ranges and have various package types for user flexibility of system design. T...K6F1616U6M
Vendor:Other Category:Other
The K6F1616U6M families are fabricated by SAMSUNG's advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. T...K6F1616U6C
Vendor:Other Category:Other
The K6F1616U6C families are fabricated by SAMSUNGs advanced full CMOS process technology. The families support industrial operating temperature ranges. The families also support low data retention voltage for battery bac...K6F1616U6A
Mfg:SEC Pack:BGA D/C:1744 Vendor:Other Category:Other
The K6F1616U6A families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system desi...K6F1616T6C
Vendor:Other Category:Other
The K6F1616T6C families are fabricated by SAMSUNG's advanced full CMOS process technology. The families support industrial operating temperature ranges. The families also support low data retention voltage for battery ba...K6F1616T6B
Vendor:Other Category:Other
The K6F1616T6B families are fabricated by SAMSUNG's advanced full CMOS process technology. The families support industrial operating temperature ranges. The families also support low data retention voltage for battery ba...K6F1616R6C
Vendor:Other Category:Other
The K6F1616R6C families are fabricated by SAMSUNGs advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. Th...K6F1016U4C
Mfg:12000 Pack:SAMSUNG Vendor:Other Category:Other
The K6F1016U4C families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The ...K6F1008V2C
Mfg:12000 Pack:SAMSUNG Vendor:Other Category:Other
The K6F1008V2C families are fabricated by SAMSUNG's advanced full CMOS process technology. The families support industrial temperature range and have various package types for user flexibility of system design. The famil...K6E0808C1E-I/E-P
Vendor:Other Category:Other
The K6E0808C1E-I/E-P is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E-I/E-P uses 8 common input and output lines and has an output enable pin which operates fast...K6E0808C1E-C/E-L
Vendor:Other Category:Other
The K6E0808C1E-C/E-L is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E-C/E-L uses 8 common input and output lines and has an output enable pin which operates fast...K6E0808C1C-C
Vendor:Other Category:Other
The K6E0808C1C-C is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1C-C uses 8 common input and output lines and has an output enable pin which operates faster than ...K66
Vendor:Other Category:Other
K5T6432YT(B)M
Vendor:Other Category:Other
The K5T6432YT(B)M featuring single 3.0V power supply is a Multi Chip Package Memory which combines 64Mbit Four Bank Flash and 32Mbit UtRAM.The 64Mbit Flash memory K5T6432YT(B)M is organized as 4M x16 bit and 32Mbit UtRA...K5P2880YCM-T085
Vendor:Other Category:Other
The K5P2880YCM-T085 featuring single 3.0V power supply is a Multi ChipPackage Memory which combines 128Mbit Nand Flash and 8Mbit full CMOS SRAM.The 128Mbit Flash memory K5P2880YCM-T085 is organized as 16M x8 bit and the ...K5N07FM
Vendor:Other Category:Other
The VND5N07, VND5N07-1, VNP5N07FI and VNK5N07FM are monolithic devices made using STMicroelectronics VIPower M0 Technology,intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal...K5L5628JT(B)M
Vendor:Other Category:Other
The K5L5628JT(B)M is a Multi Chip Package Memory which combines 256Mbit Synchronous Burst Multi Bank NOR Flash Memory and 128Mbit Synchronous Burst UtRAM.256Mbit Synchronous Burst Multi Bank NOR Flash Memory K5L5628JT(B)...K5L5563CAA-D770
Vendor:Other Category:Other
The K5L5563CAA-D770 is one member of the K5L5563 family which is designed as the multi chip package memory that requires 15mA as program/erase current. This K5L5563CAA-D770 supports the traditional SRAM like asynchronou...K5D5657DCM-F015
Vendor:Other Category:Other
The K5D5657DCM is a Multi Chip Package Memory which combines 256Mbit Nand Flash Memory and 256Mbit synchronous high data rate Dynamic RAM.256Mbit NAND Flash memory K5D5657DCM-F015 is organized as 32M x8 bits and 256Mbit ...K5D5657ACM-F015
Vendor:Other Category:Other
The K5D5657ACM-F015 is a Multi Chip Package Memory which combines 256Mbit Nand Flash Memory and 256Mbit synchronous high data rate Dynamic RAM.256Mbit NAND Flash memory K5D5657ACM-F015 is organized as 32M x8 bits and 256...K5D1G12DCM-DO90
Vendor:Other Category:Other
The K5D1G12DCM-DO90 is one member of the K5D1G12 family which is designed as the multi chip package memory that requires 15mA as program/erase current. This K5D1G12DCM-DO90 supports the traditional SRAM like asynchronou...K5D12121CM-DO90
Vendor:Other Category:Other
The K5D12121CM-DO90 is one member of the K5D12121 family which is designed as the multi chip package memory that requires 15mA as program/erase current. This K5D12121CM-DO90 supports the traditional SRAM like asynchronou...K5A3x40YT(B)C
Vendor:Other Category:Other
The K5A3x40YT(B)C featuring single 3.0V power supply is a Multi Chip Package Memory which combines 32Mbit Dual Bank Flash and 4Mbit fCMOS SRAM.The 32Mbit Flash memory K5A3x40YT(B)C is organized as 4M x8 or 2M x16 bit and...K596
Vendor:Other Category:Other
K573A
Vendor:Other Category:Other
Phase-Locked Loops (PLLs), ClockRecovery, Reference Signal Tracking,Synthesizers, Frequency Modulation/Demodulation K573AK570A
Vendor:Other Category:Other
This K570A is not recommended for new designs. Please refer to the MVH product series.K570A Series, 8 pin DIP, CMOS/TTL, 5 V VCXO - Phase-Locked Loops (PLL's), ClockRecovery, Reference Signal Tracking,Synthesizers, Frequ...K5641
Vendor:Other Category:Other
These Photocouplers K5641 consist of two Gallium Arsenide Infrared Emitting Diodes and a Silicon NPN Phototransistor in a 6-pin package.K5640
Vendor:Other Category:Other
These Photocouplers K5640 consist of two Gallium Arsenide Infrared Emitting Diodes and a Silicon NPN Phototransistor in a 6-pin package.K5631
Vendor:Other Category:Other
These Photocouplers K5631 consist of two Gallium Arsenide Infrared Emitting Diodes and a Silicon NPN Phototransistor in a 6-pin package.K5630
Vendor:Other Category:Other
These Photocouplers K5630 consist of two Gallium Arsenide Infrared Emitting Diodes and a Silicon NPN Phototransistor in a 6-pin package.K5621
Vendor:Other Category:Other
These Photocouplers K5621 consist of two Gallium Arsenide Infrared Emitting Diodes and a Silicon NPN Phototransistor in a 6-pin package.K5620
Mfg:KODENSHI D/C:91+ Vendor:Other Category:Other
These Photocouplers K5620 consist of two Gallium Arsenide Infrared Emitting Diodes and a Silicon NPN Phototransistor in a 6-pin package.K5611
Vendor:Other Category:Other
These Photocouplers K5611 consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin package.K5610
Mfg:VISHAY Pack:05+ D/C:SOP-6 Vendor:Other Category:Other
These Photocouplers K5610 consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin package.K510
Vendor:Other Category:Other
K50H-3C
Vendor:Other Category:Other
K50-3C
Vendor:Other Category:Other
K500F
Vendor:Other Category:Other
This K500F is not recommended for new designs. Please refer to the MH product series.K500F Series, 5V, CMOS/TTL, Crystal Clock Oscillators - 4-pin Package, Compatible with 8-pin DIL, Tight Symmetry (45/55%) Available, Tr...K500
Mfg:N/A Pack:TO-3P D/C:04+ Vendor:Other Category:Other
This K500 is not recommended for new designs. Please refer to the MH product series.K500 Series, 5V, CMOS/TTL, Crystal Clock Oscillators - 4-pin Package Compatible with 8-pin DIL, Tight Symmetry (45/55%) Available, Tri-S...K4Y50164UC
Vendor:Other Category:Other
The XDR DRAM device K4Y50164UC is a general-purpose high-performance memory device suitable for use in a broad range of applications, including computer memory, graphics, video, and any other application where high bandw...K4Y50084UC
Vendor:Other Category:Other
The XDR DRAM K4Y50084UC is a general-purpose high-performance memory device suitable for use in a broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth a...K4Y50044UC
Vendor:Other Category:Other
The XDR DRAM device K4Y50044UC is a general-purpose high-performance memory device suitable for use in a broad range of applications, including computer memory, graphics, video, and any other application where high band...K4Y50024UC
Vendor:Other Category:Other
The XDR DRAM device K4Y50024UC is a general-purpose high-performance memory device suitable for use in a broad range of applications, including computer memory, graphics, video, and any other application where high bandw...K4X56323PG - 7
Vendor:Other Category:Other
K4X56163PE-L(F)G
Vendor:Other Category:Other
K4X51323PC - 7
Vendor:Other Category:Other
K4X1G163PE-FGC6
Vendor:Other Category:Other
The K4X1G163PE-FGC6 64Mx16 Mobile DDR SDRAM. Features of the K4X1G163PE-FGC6 are:(1)VDD/VDDQ = 1.8V/1.8V; (2)Double-data-rate architecture; two data transfers per clock cycle; (3)Bidirectional data strobe(DQS); (4)Four ...K4T56083QF-GCE6
Vendor:Other Category:Other
The 256Mb DDR2 SDRAM chip K4T56083QF-GCE6 is organized as either 16Mbit x 4 I/Os x 4 banks or 8Mbit x 8 I/Os x 4banks device. This synchronous device K4T56083QF-GCE6 achieves high speed double-data-rate transfer rates of...K4T56043QF-GCD5
Vendor:Other Category:Other
The 256Mb DDR2 SDRAM chip K4T56043QF-GCD5 is organized as either 16Mbit x 4 I/Os x 4 banks or 8Mbit x 8 I/Os x 4banks device. This synchronous device K4T56043QF-GCD5 achieves high speed double-data-rate transfer rates of...K4T56043QF-GCCC
Vendor:Other Category:Other
The 256Mb DDR2 SDRAM chip K4T56043QF-GCCC is organized as either 16Mbit x 4 I/Os x 4 banks or 8Mbit x 8 I/Os x 4banks device. This synchronous device K4T56043QF-GCCC achieves high speed double-data-rate transfer rates of...K4T51163QG-HLCC
Vendor:Other Category:Other
The K4T51163QG-HLCC is a kind of 512Mb DDR2 SDRAM. The K4T51163QG-HLCC is organized as a 32Mbit*16 I/Os*4 banks device. The K4T51163QG-HLCC operates with a single 1.8 V±0.1 V power supply and 1.8 V±0.1 VDDQ. The K4T51163...K4T51163QG-HCE7
Vendor:Other Category:Other
The K4T51163QG-HCE7 is a kind of 512Mb DDR2 SDRAM. The K4T51163QG-HCE7 is organized as a 32Mbit*16 I/Os*4 banks device. The K4T51163QG-HCE7 operates with a single 1.8 V±0.1 V power supply and 1.8 V±0.1 VDDQ. The K4T51163...K4T51163QG-HCE6
Vendor:Other Category:Other
The K4T51163QG-HCE6 is a kind of 512Mb DDR2 SDRAM. The K4T51163QG-HCE6 is organized as a 32Mbit*16 I/Os*4 banks device. The K4T51163QG-HCE6 operates with a single 1.8 V±0.1 V power supply and 1.8 V±0.1 VDDQ. It is availa...K4T51163QG-HCD5
Vendor:Other Category:Other
The K4T51163QG-HCD5 is a kind of 512Mb DDR2 SDRAM. The K4T51163QG-HCD5 is organized as a 32Mbit*16 I/Os*4 banks device. The K4T51163QG-HCD5 operates with a single 1.8 V±0.1 V power supply and 1.8 V±0.1 VDDQ. It is availa...K4T51163QE
Vendor:Other Category:Other
The 512Mb DDR2 SDRAM K4T51163QE is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed doubledata- rate transfer rates of up...K4T51083QE
Pack:BGA Vendor:Other Category:Other
The 512Mb DDR2 SDRAM K4T51083QE is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device K4T51083QE achieves high speed doubledata- rate transfer ...K4T51043QE
Vendor:Other Category:Other
The 512Mb DDR2 SDRAM K4T51043QE is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device K4T51043QE achieves high speed doubledata- rate transfer ...K4T51043QC-ZC(L)E7
Vendor:Other Category:Other
The 512Mb DDR2 SDRAM K4T51043QC-ZC(L)E7 is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed doubledata-rate transfer rate...K4T51043QC-ZC(L)E6
Vendor:Other Category:Other
The 512Mb DDR2 SDRAM K4T51043QC-ZC(L)E6 is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device K4T51043QC-ZC(L)E6 achieves high speed doubledata...K4T51043QC-ZC(L)D5
Vendor:Other Category:Other
The 512Mb DDR2 SDRAM K4T51043QC-ZC(L)D5 is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device K4T51043QC-ZC(L)D5 achieves high speed doubledata...K4T51043QB-GCD5
Vendor:Other Category:Other
The 512Mb DDR2 SDRAM K4T51043QB-GCD5 is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device K4T51043QB-GCD5 achieves high speed doubledata-rate ...K4T51043QB-GCCC
Vendor:Other Category:Other
The 512Mb DDR2 SDRAM K4T51043QB-GCCC is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device K4T51043QB-GCCC achieves high speed doubledata-rate ...K4T1G044QM-ZCD5
Vendor:Other Category:Other
The 1Gb DDR2 SDRAM K4T1G044QM-ZCD5 is organized as a 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device K4T1G044QM-ZCD5 achieves high speed double-data-rate t...K4T1G044QM-ZCCC
Vendor:Other Category:Other
The 1Gb DDR2 SDRAM K4T1G044QM-ZCCC is organized as a 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device K4T1G044QM-ZCCC achieves high speed double-data-rate t...K4T1G044QA
Vendor:Other Category:Other
The 1Gb DDR2 SDRAM K4T1G044QA is organized as a 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device K4T1G044QA achieves high speed doubledata-rate transfer rat...K4S64323LH
Vendor:Other Category:Other
The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle cont...K4S64323LF-SU
Vendor:Other Category:Other
The K4S64323LF-SU is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology.Synchronous design of K4S64323LF-SU a...K4S64323LF-SP
Vendor:Other Category:Other
The K4S64323LF-SP is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology.Synchronous design of K4S64323LF-SP a...K4S64323LF-SN
Vendor:Other Category:Other
The K4S64323LF-SN is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology.Synchronous design of K4S64323LF-SN a...K4S64323LF-S(D)S
Vendor:Other Category:Other
The K4S64323LF-S(D)S is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology.Synchronous design of K4S64323...K4S64323LF-S(D)G
Vendor:Other Category:Other
The K4S64323LF-S(D)G is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology.Synchronous design of K4S64323...K4S64323LF-DU
Vendor:Other Category:Other
The K4S64323LF-DU is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology.Synchronous design of K4S64323LF-DU a...K4S64323LF-DN
Vendor:Other Category:Other
The K4S64323LF-DN is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology.Synchronous design of K4S64323LF-DN ...K4S643233H-HE
Vendor:Other Category:Other
The K4S643233H-HE is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S643233H-HE allow...K4S643233H-FN
Vendor:Other Category:Other
The K4S643233H-FN is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S643233H-FN allo...K4S643233H-FL
Vendor:Other Category:Other
The K4S643233H-FL is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S643233H-FL allow...K4S643233H-FG
Vendor:Other Category:Other
The K4S643233H-FG is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S643233H-FG allow...K4S643233H-FE
Vendor:Other Category:Other
The K4S643233H-FE is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S643233H-FE allow...K4S643233H-FC
Vendor:Other Category:Other
The K4S643233H-FC is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S643233H-FC allow...K4S643233H - F(H)N
Vendor:Other Category:Other
The K4S643233H - F(H)N is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S643233H - F...K4S643233H - F(H)L
Vendor:Other Category:Other
The K4S643233H - F(H)L is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S643233H - F...K4S643233H - F(H)G
Vendor:Other Category:Other
The K4S643233H - F(H)G is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S643233H - F...K4S643233H - F(H)F
Vendor:Other Category:Other
The K4S643233H - F(H)F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S643233H - F...K4S643233H - F(H)E
Vendor:Other Category:Other
The K4S643233H - F(H)E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S643233H - F...K4S643233H - F(H)C
Vendor:Other Category:Other
The K4S643233H - F(H)C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S643233H - F...K4S643233F-SP
Vendor:Other Category:Other
The K4S643233F-SP is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology.Synchronous design of K4S643233F-SP allows ...K4S643233F-SN
Vendor:Other Category:Other
The K4S643233F-SN is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology.Synchronous design of K4S643233F-SN allows ...K4S643233F-SI
Vendor:Other Category:Other
The K4S643233F-SI is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology.Synchronous design of K4S643233F-SI allows ...K4S643233F-SE
Vendor:Other Category:Other
The K4S643233F-SE is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology.Synchronous design of K4S643233F-SE allows ...K4S643233F-S(D)P
Vendor:Other Category:Other
The K4S643233F-S(D)P is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design of K4S6432...K4S643233F-S(D)N
Vendor:Other Category:Other
The K4S643233F-S(D)N is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design of K4S643...K4S643233F-S(D)I
Vendor:Other Category:Other
The K4S643233F-S(D)I is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design of K4S6432...K4S643233F-S(D)E
Vendor:Other Category:Other
The K4S643233F-S(D)E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design of K4S6432...K4S643233F-DE
Vendor:Other Category:Other
The K4S643233F-DE is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology.Synchronous design of K4S643233F-DE allows ...K4S643232H-TC_L50
Vendor:Other Category:Other
The K4S643232H-TC_L50 is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design of K4S643232H-TC_L5...K4S643232H
Vendor:Other Category:Other
The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle contr...K4S643232F-TI
Vendor:Other Category:Other
The K4S643232F-TI is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design of K4S643232F-TI ...