Features: Highest pin bandwidth available- 4000/3200/2400 Mb/s Octal Data Rate(ODR) Signaling Bi-directional differential RSL(DRSL)- Flexible read/write bandwidth allocation- Minimum pin count On-chip termination- Adaptive impedance matching- Reduced system cost and routing complexity Highest sus...
K4Y50044UC: Features: Highest pin bandwidth available- 4000/3200/2400 Mb/s Octal Data Rate(ODR) Signaling Bi-directional differential RSL(DRSL)- Flexible read/write bandwidth allocation- Minimum pin count On-c...
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Features: Highest pin bandwidth available- 4000/3200/2400 Mb/s Octal Data Rate(ODR) Signaling Bi-...
Features: Highest pin bandwidth available- 4000/3200/2400 Mb/s Octal Data Rate(ODR) Signaling Bi-...
Features: Highest pin bandwidth available- 4000/3200/2400 Mb/s Octal Data Rate(ODR) Signaling Bi-...
The XDR DRAM device K4Y50044UC is a general-purpose high-performance memory device suitable for use in a broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
The 512Mb XDR DRAM device K4Y50044UC is a CMOS DRAM organized as 32M words by 16bits. The use of Differential Rambus Signaling Level(DRSL) technology permits 4000/3200/2400 Mb/s transfer rates while using conventional system and board design technologies.
XDR DRAM devices are capable of sustained data transfers up to 8000 MB/s.
XDR DRAM device K4Y50044UC architecture allows the highest sustained bandwidth for multiple, interleaved randomly addressed memory transactions.
The highly-efficient protocol yields over 95% utilization while allowing fine access granuarity. The K4Y50044UC 's eight banks support up
to four interleaved transactions.