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K6F1016U4C

Features: · Process Technology: Full CMOS· Organization: 64K x16 bit· Power Supply Voltage: 2.7~3.3V· Low Data Retention Voltage: 1.5V(Min)· Three State Outputs· Package Type: 48-TBGA-6.00x7.00(Leaded and Lead Free)PinoutSpecifications Item Symbol Ratings Unit Voltage on any pin relat...

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K6F1016U4C: Features: · Process Technology: Full CMOS· Organization: 64K x16 bit· Power Supply Voltage: 2.7~3.3V· Low Data Retention Voltage: 1.5V(Min)· Three State Outputs· Package Type: 48-TBGA-6.00x7.00(Lead...

K6F1016U4C Data Sheet

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Part Number:
K6F1016U4C
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

· Process Technology: Full CMOS
· Organization: 64K x16 bit
· Power Supply Voltage: 2.7~3.3V
· Low Data Retention Voltage: 1.5V(Min)
· Three State Outputs
· Package Type: 48-TBGA-6.00x7.00(Leaded and Lead Free)


Pinout

Connection Diagram


Specifications

Item Symbol Ratings Unit
Voltage on any pin relative to Vss VIN,VOUT -0.2 to VCC+0.3V V
Voltage on Vcc supply relative to Vss VCC -0.2 to 3.6V V
Power Dissipation PD 1.0 W
Storage temperature TSTG -65 to 150 °C
Operating Temperature TA -40 to 85 °C

1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions longer than 1 seconds may affect reliability.




Description

The K6F1016U4C families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.




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