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K6F2008V2E

Features: • Process Technology: Full CMOS• Organization: 256Kx8• Power Supply Voltage: 3.0 ~ 3.6V• Low Data Retention Voltage: 1.5V(Min)• Three State Outputs• Package Type: 32-TSOP1-0813.4F, 32-TSOP1-0813.4F(LF)PinoutSpecifications Item Symbol Ratings Un...

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SeekIC No. : 004383138 Detail

K6F2008V2E: Features: • Process Technology: Full CMOS• Organization: 256Kx8• Power Supply Voltage: 3.0 ~ 3.6V• Low Data Retention Voltage: 1.5V(Min)• Three State Outputs• Pac...

K6F2008V2E Data Sheet

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Part Number:
K6F2008V2E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Process Technology: Full CMOS
• Organization: 256Kx8
• Power Supply Voltage: 3.0 ~ 3.6V
• Low Data Retention Voltage: 1.5V(Min)
• Three State Outputs
• Package Type: 32-TSOP1-0813.4F, 32-TSOP1-0813.4F(LF)


Pinout

Connection Diagram


Specifications

Item Symbol Ratings Unit Remark
Voltage on any pin relative to Vss VIN,VOUT -0.2 to VCC+0.5V V  
Voltage on Vcc supply relative to Vss VCC -0.2 to 4.6V V  
Power Dissipation PD 1.0 W  
Storage temperature TSTG -65 to 150 °C  
Operating Temperature TA -40 to 85 °C K6F2008V2E-F

1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.




Description

The K6F2008V2E families are fabricated by SAMSUNG¢s advanced Full CMOS process technology. The families support industrial temperature ranges for user flexibility of system design. The families also supports low data retention voltage for battery back-up operation with low data retention current.




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