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K6F2008T2E

Features: • Process Technology: Full CMOS• Organization: 256Kx8• Power Supply Voltage: 2.7 ~ 3.6V• Low Data Retention Voltage: 1.5V(Min)• Three State Outputs• Package Type: 32-TSOP1-0813.4FPinoutSpecifications Item Symbol Ratings Unit Remark Voltag...

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SeekIC No. : 004383136 Detail

K6F2008T2E: Features: • Process Technology: Full CMOS• Organization: 256Kx8• Power Supply Voltage: 2.7 ~ 3.6V• Low Data Retention Voltage: 1.5V(Min)• Three State Outputs• Pac...

K6F2008T2E Data Sheet

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Part Number:
K6F2008T2E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Process Technology: Full CMOS
• Organization: 256Kx8
• Power Supply Voltage: 2.7 ~ 3.6V
• Low Data Retention Voltage: 1.5V(Min)
• Three State Outputs
• Package Type: 32-TSOP1-0813.4F


Pinout

Connection Diagram


Specifications

Item Symbol Ratings Unit Remark
Voltage on any pin relative to Vss VIN,VOUT -0.2 to VCC+0.5V V  
Voltage on Vcc supply relative to Vss VCC -0.2 to 4.6V V  
Power Dissipation PD 1.0 W  
Storage temperature TSTG -65 to 150 °C  
Operating Temperature TA -40 to 85 °C K6F2008T2E-F



Description

The K6F2008T2E families are fabricated by SAMSUNG¢s advanced Full CMOS process technology. The families support industrial temperature ranges for user flexibility of system design. The families also supports low data retention voltage for battery back-up operation with low data retention current.


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