Features: Fast Access Time 10, 12, 15ns(Max.)• Low Power Dissipation Standby (TTL) : 20mA(Max.)(CMOS) : 2mA(Max.)0.6mA(Max.) L-ver. Only Operating K6E0808C1E-10 : 80mA(Max.)K6E0808C1E-12 : 80mA(Max.)K6E0808C1E-15 : 80mA(Max.)• Single 5.0V±10% Power Supply• TTL Compatible Inputs a...
K6E0808C1E-C/E-L: Features: Fast Access Time 10, 12, 15ns(Max.)• Low Power Dissipation Standby (TTL) : 20mA(Max.)(CMOS) : 2mA(Max.)0.6mA(Max.) L-ver. Only Operating K6E0808C1E-10 : 80mA(Max.)K6E0808C1E-12 : 80m...
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Features: • Fast Access Time 12, 15, 20ns(Max.)• Low Power Dissipation Standby (TTL) :...
Features: Fast Access Time 10, 12, 15ns(Max.)• Low Power Dissipation Standby (TTL) : 20mA(Ma...
Parameter | Symbol | Rating | Unit | |
Voltage on Any Pin Relative to VSS | VIN, VOUT | -0.5 to 7.0 | V | |
Voltage on VCC Supply Relative to VSS | VCC | -0.5 to 7.0 | V | |
Power Dissipation | PD | 1.0 | W | |
Storage Temperature | TSTG | -65 to 150 | °C | |
Operating Temperature | Commercial | TA | 0 to 70 | °C |
Industrial | TA | -40 to 85 | °C |
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.Exposure to absolute maximum rating conditions for extended periods may affect reliability.
The K6E0808C1E-C/E-L is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E-C/E-L uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The K6E0808C1E-C/E-L is fabricated using SAMSUNG¢s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6E0808C1E-C/E-L is packaged in a 300mil 28-pin plastic SOJ or TSOP1 forward.