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Index K : K4S51323LF-F,K4S51323LF-EC,K4N25H,
K4S51323LF-F
Vendor:Other Category:Other
The K4S51323LF-F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle ...K4S51323LF-EC
Vendor:Other Category:Other
The K4S51323LF-EC is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle...K4S51323LF
Vendor:Other Category:Other
The K4S51323LF is 536,870,912 bits synchronous high data Date Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle c...K4S513233F-ML
Vendor:Other Category:Other
The K4S513233F-ML is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle...K4S513233F-MF
Vendor:Other Category:Other
The K4S513233F-MF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle...K4S513233F-MC
Vendor:Other Category:Other
The K4S513233F-MC is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S513233F-MC all...K4S513233F-EC
Vendor:Other Category:Other
The K4S513233F-EC is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S513233F-EC all...K4S513233F
Vendor:Other Category:Other
The K4S513233F is 536,870,912 bits synchronous high data Date Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle c...K4S51163PF
Vendor:Other Category:Other
The K4S51163PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle...K4S511633F-Y(P)L
Vendor:Other Category:Other
The K4S511633F-Y(P)L is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise c...K4S511633F-Y(P)F
Vendor:Other Category:Other
The K4S511633F-Y(P)F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise c...K4S511633F-Y(P)C
Vendor:Other Category:Other
The K4S511633F-Y(P)C is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise c...K4S511633C-YL
Vendor:Other Category:Other
The K4S511633C-YL is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16bits,fabricated with SAMSUNG's high performance CMOS technology.Synchronous design allows precise cycle c...K4S511633C-P
Vendor:Other Category:Other
The K4S511633C-P is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16bits,fabricated with SAMSUNG's high performance CMOS technology.Synchronous design allows precise cycle co...K4S511633C-N
Vendor:Other Category:Other
The K4S511633C-N is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16bits,fabricated with SAMSUNG's high performance CMOS technology.Synchronous design of K4S511633C-N allows ...K4S511632D-UC75
Vendor:Other Category:Other
The K4S511632D-UC75 is designed as 536,870,912 bits synchronous high data rate dynamic RAM organized as 4 x 8,392,608 words by 16bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S...K4S511632D
Vendor:Other Category:Other
The K4S511632D is 536,870,912 bits synchronous high data rateDynamic RAM organized as 4 x 8,392,608words by 16bits, fabri-cated with SAMSUNG's high performance CMOS technology. Syn-chronous design allows precise cycle co...K4S511632C
Vendor:Other Category:Other
The K4S511632C is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608words by 16bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle con...K4S511632B
Vendor:Other Category:Other
The K4S510432B / K4S510832B / K4S511632B is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 4 bits / 4 x 16,777,216 words by 8 bits / 4 x 8,388,608 words by 16 bits, fabricate...K4S51153PF - Y(P)F
Vendor:Other Category:Other
The K4S51153PF - Y(P)F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise...K4S511533F - Y(P)L
Vendor:Other Category:Other
The K4S511533F - Y(P)L is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise...K4S511533F - Y(P)F
Vendor:Other Category:Other
The K4S511533F - Y(P)F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise...K4S511533F - Y(P)C
Vendor:Other Category:Other
The K4S511533F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle c...K4S510832M
Vendor:Other Category:Other
The K4S510832M is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 8 bits,fabricated with SAMSUNG's high performance CMOS technology.Synchronous design allows precise cycle con...K4S510832B
Vendor:Other Category:Other
The K4S510432B / K4S510832B / K4S511632B is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 4 bits / 4 x 16,777,216 words by 8 bits / 4 x 8,388,608 words by 16 bits, fabricate...K4S510432B
Vendor:Other Category:Other
The K4S510432B / K4S510832B / K4S511632B is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 4 bits / 4 x 16,777,216 words by 8 bits / 4 x 8,388,608 words by 16 bits, fabricate...K4S281633D-RL(N)
Vendor:Other Category:Other
The K4S281633D-RL(N) is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows prec...K4S281632M
Vendor:Other Category:Other
The K4S281632M is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cy...K4S281632K-UC75
Vendor:Other Category:Other
The K4S281632K-UC75 is one member of the K4S281632K family which is designed as the 128M x 8 bit / 64M x 16 bit NAND flash memory and the NAND cell of it provides the most costeffective solution for the solid state mass ...K4S281632I-UC75
Vendor:Other Category:Other
The K4S281632I-UC75 is designed as 134,217,728 bits synchronous high data rate dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows...K4S281632I-UC60T
Vendor:Other Category:Other
The K4S281632I-UC60T is one member of the K4S281632K family which is designed as the 128M x 8 bit / 64M x 16 bit NAND flash memory and the NAND cell of it provides the most costeffective solution for the solid state mass...K4S281632I
Vendor:Other Category:Other
The K4S280432I / K4S280832I / K4S281632I is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated ...K4S281632F-UC75
Vendor:Other Category:Other
The K4S281632F-UC75 is designed as 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows...K4S281632F-TC(L)60/75
Vendor:Other Category:Other
The K4S280432F / K4S280832F / K4S281632F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated w...K4S281632F
Mfg:SAMSUNG Vendor:Other Category:Other
K4S281632E-TC75T00
Vendor:Other Category:Other
The K4S281632E-TC75T00 is one member of the K4S281632E family which is designed as the 134,217,728 bits synchronous high data rate Dynamic RAM. Features of this K4S281632E-TC75T00 are:(1)JEDEC standard 3.3V power supply;...K4S281632E-TC(L)60/75
Vendor:Other Category:Other
The K4S280432E / K4S280832E / K4S281632E is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated w...K4S281632D
Mfg:SAM Pack:193 D/C:02+ Vendor:Other Category:Other
The K4S281632D is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cy...K4S281632C-TI(P)
Vendor:Other Category:Other
The K4S281632C is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cy...K4S281632C
Vendor:Other Category:Other
The K4S281632C is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cy...K4S281632B-N
Mfg:N/A Pack:N/A D/C:N/A Vendor:Other Category:Other
The K4S281632B-N is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise ...K4S281632B
Vendor:Other Category:Other
The K4S281632B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cy...K4S280832M
Vendor:Other Category:Other
The K4S280832M is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8 bits,fabricated with SAMSUNG¢s high performance CMOS technology.Synchronous design allows precise cycle...K4S280832I
Vendor:Other Category:Other
The K4S280432I / K4S280832I / K4S281632I is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated ...K4S280832F-TC(L)75
Vendor:Other Category:Other
The K4S280432F / K4S280832F / K4S281632F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated w...K4S280832F
Vendor:Other Category:Other
K4S280832E-TC(L)75
Vendor:Other Category:Other
The K4S280432E / K4S280832E / K4S281632E/K4S280832E-TC(L)75 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16...K4S280832D
Vendor:Other Category:Other
The K4S280832D is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8 bits,fabricated with SAMSUNG¢s high performance CMOS technology.Synchronous design allows precise cycle...K4S280832C
Vendor:Other Category:Other
The K4S280832C is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8 bits,fabricated with SAMSUNG¢s high performance CMOS technology.Synchronous design allows precise cycle...K4S280832A
Vendor:Other Category:Other
The K4S280832A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology.Synchronous design allows precise cycl...K4S280432M
Vendor:Other Category:Other
The K4S280432M is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits,fabricated with SAMSUNG¢s high performance CMOS technology.Synchronous design allows precise cycle...K4S280432I
Vendor:Other Category:Other
The K4S280432I / K4S280832I / K4S281632I is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated ...K4S280432F-TC(L)75
Vendor:Other Category:Other
The K4S280432F / K4S280832F / K4S281632F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated w...K4S280432F
Vendor:Other Category:Other
K4S280432E-TC(L)75
Vendor:Other Category:Other
The K4S280432E / K4S280832E / K4S281632E is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated w...K4S280432C
Vendor:Other Category:Other
The K4S280432C is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits,fabricated with SAMSUNG¢s high performance CMOS technology.Synchronous design allows precise cycle...K4S280432B
Vendor:Other Category:Other
The K4S280432B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits,fabricated with SAMSUNG¢s high performance CMOS technology.Synchronous design allows precise cycle...K4S280432A
Vendor:Other Category:Other
The K4S280432A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits,fabricated with SAMSUNG¢s high performance CMOS technology.Synchronous design allows precise cycle...K4S1G0732B-TC75
Vendor:Other Category:Other
The K4S1G0732B-TC75 is 1,073,741,824bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 8 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise c...K4S161622H-UC60
Vendor:Other Category:Other
The K4S161622H-UC60 is 16,777,216 bits synchronous high data rate Dynamic RAM and K4S161622H-UC60 is organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. The K4S161622H-UC...K4S161622H-TC80
D/C:08+ Vendor:Other Category:Other
The K4S161622H-TC80 is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle ...K4S161622H-TC70
Mfg:SAMSUNG Pack:SSOP D/C:3 Vendor:Other Category:Other
The K4S161622H-TC70 is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle ...K4S161622H-TC60
Mfg:SAMSUNG Pack:TSOP D/C:04+ Vendor:Other Category:Other
The K4S161622H-TC60 is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle ...K4S161622H-TC55
Vendor:Other Category:Other
The K4S161622H-TC55 is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle ...K4S161622E
Vendor:Other Category:Other
The K4S161622E is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits,fabricated with SAMSUNGs high performance CMOS technology.Synchronous design allows precise cycle control...K4S161622D-TI/E
Vendor:Other Category:Other
The K4S161622D-TI/E is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits,fabricated with SAMSUNGs high performance CMOS technology.Synchronous design allows precise cycle co...K4S161622D
Mfg:SAMSUNG Pack:TSOP-50 D/C:06+ Vendor:Other Category:Other
The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits,fabricated with SAMSUNG¢s high performance CMOS technology.Synchronous design allows precise cycle c...K4S160822D
Vendor:Other Category:Other
The K4S160822D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 8 bits,fabricated with SAMSUNG¢s high performance CMOS technology.Synchronous design allows precise cycle ...K4R881869M
Vendor:Other Category:Other
Figure 2 is a block diagram of the 128Mbit RDRAM device K4R881869M. The K4R881869M consists of two major blocks: a "core" block built from banks and sense amps similar to those found in other types of DRAM and a Direct ...K4R881869D
Vendor:Other Category:Other
Figure 2 is a block diagram of the 128Mbit RDRAM device K4R881869D. The K4R881869D consists of two major blocks: a "core" block built from banks and sense amps similar to those found in other types of DRAM and a Direct R...K4R761869A
Vendor:Other Category:Other
Figure 2 is a block diagram of the 128Mbit RDRAM device K4R761869A. The K4R761869A consists of two major blocks: a "core" block built from banks and sense amps similar to those found in other types of DRAM and a Direct R...K4R571669D
Vendor:Other Category:Other
Figure 2 is a block diagram of the 128Mbit RDRAM device K4R571669D. The K4R571669D consists of two major blocks: a "core" block built from banks and sense amps similar to those found in other types of DRAM and a Direct R...K4R441869B
Mfg:SAMSUNG Pack:BGA Vendor:Other Category:Other
Figure 2 is a block diagram of the 128Mbit RDRAM device K4R441869B.THe K4R441869B consists of two major blocks: a "core" block built from banks and sense amps similar to those found in other types of DRAM and a Direct Ra...K4R271869A
Vendor:Other Category:Other
Figure 2 is a block diagram of the 128Mbit RDRAM device K4R271869A. The K4R271869A consists of two major blocks: a "core" block built from banks and sense amps similar to those found in other types of DRAM and a Direct R...K4R271669F
Mfg:SEC Pack:N/A D/C:08+ Vendor:Other Category:Other
Figure 2 is a block diagram of the 128Mbit RDRAM device K4R271669F. The K4R271669F consists of two major blocks: a "core" block built from banks and sense amps similar to those found in other types of DRAM and a Direct R...K4R271669E
Mfg:SAMSUNG Pack:BGA Vendor:Other Category:Other
Figure 2 is a block diagram of the 128Mbit RDRAM device K4R271669E.The K4R271669E consists of two major blocks: a "core" block built from banks and sense amps similar to those found in other types of DRAM and a Direct Ra...K4R271669D
Mfg:N/A Pack:BGA D/C:08+ Vendor:Other Category:Other
Figure 2 is a block diagram of the 128Mbit Direct RDRAM K4R271669D. The K4R271669D consists of two major blocks: a "core" block built from banks and sense amps similar to those found in other types of DRAM, and a Direct ...K4R271669B
Vendor:Other Category:Other
Figure 2 is a block diagram of the 128Mbit RDRAM device K4R271669B.The K4R271669B consists of two major blocks: a "core" block built from banks and sense amps similar to those found in other types of DRAM and a Direct Ra...K4R271669A
Mfg:SAMSUNG Vendor:Other Category:Other
Figure 2 is a block diagram of the 128Mbit RDRAM device K4R271669A.The K4R271669A consists of two major blocks: a "core" block built from banks and sense amps similar to those found in other types of DRAM and a Direct Ra...K4N56163QF-GC
Vendor:Other Category:Other
The 256Mb gDDR2 SDRAM chip K4N56163QF-GC is organized as 4Mbit x 16 I/O x 4banks banks device. This synchronous device K4N56163QF-GC achieve high speed graphic double-data-rate transfer rates of up to 1000Mb/sec/pin for ...K4N51163QC-ZC
Vendor:Other Category:Other
The 512Mb gDDR2 SDRAM chip K4N51163QC-ZC is organized as 8Mbit x 16 I/O x 4banks banks device. This synchronous device K4N51163QC-ZC achieve high speed graphic double-data-rate transfer rates of up to 800Mb/sec/pin for g...K4N38A
Vendor:Other Category:Other
These Photocouplers K4N38A consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin package.K4N38(A)
Vendor:Other Category:Other
K4N38
Vendor:Other Category:Other
These Photocouplers K4N38 consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin package.K4N37
Vendor:Other Category:Other
These Photocouplers K4N37 consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in 6-pin package.K4N36
Vendor:Other Category:Other
These Photocouplers K4N36 consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in 6-pin package.K4N35~37
Vendor:Other Category:Other
K4N35
Vendor:Other Category:Other
These Photocouplers K4N35 consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in 6-pin package.K4N33
Vendor:Other Category:Other
These Photocouplers K4N33 cosist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Photo Darlington transistor in a 6-pin package.K4N32A
Vendor:Other Category:Other
These Photocouplers K4N32A cosist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Photo Darlington transistor in a 6-pin package.K4N32
Vendor:Other Category:Other
These Photocouplers K4N32 cosist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Photo Darlington transistor in a 6-pin package.K4N31
Vendor:Other Category:Other
These Photocouplers K4N31 cosist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Photo Darlington transistor in a 6-pin package.K4N30
Vendor:Other Category:Other
These Photocouplers K4N30 cosist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Photo Darlington transistor in a 6-pin package.K4N29A
Vendor:Other Category:Other
These Photocouplers K4N29A cosist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Photo Darlington transistor in a 6-pin package.K4N29
Vendor:Other Category:Other
These Photocouplers K4N29 cosist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Photo Darlington transistor in a 6-pin package.K4N28
Vendor:Other Category:Other
These Photocouplers K4N28 consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin package.K4N27
Vendor:Other Category:Other
These Photocouplers K4N27 consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin package.K4N26323AE-GC
Vendor:Other Category:Other
The 4Mx32 GDDR2 is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 1,048,976 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous features with Data Strob...K4N26~28
Vendor:Other Category:Other
K4N25H
Vendor:Other Category:Other
These Photocouplers K4N25H cosist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin package.