K4S511633C-N

Features:

• 3.0V power supply
• LVCMOS compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
-. CAS latency (1 & 2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation
• DQM for masking
• Auto & self refresh
• 64ms refresh period (8K cycle)
• 1 /CS Support.
• Commercial Temperature Operation (-25°C ~ 70°C). Extended Temperature Operation (-25°C ~ 85°C). Industrial Temperature Operation (-40°C ~ 85°C).
• 54balls DDP CSP


Specifications

Parameter	Symbol	Value	Unit
Voltage on any pin relative to Vss	VIN, VOUT	-1.0 ~ 4.6	V
Voltage on VDD supply relative to Vss	VDD, VDDQ	-1.0 ~ 4.6	V
Storage temperature	TSTG	-55 ~ +150	°C
Power dissipation	PD	1	W
Short circuit current	IOS	50	mA

Description

The K4S511633C-N is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16bits,fabricated with SAMSUNG's high performance CMOS technology.
Synchronous design of K4S511633C-N allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.