K4S510832B

Features:

• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
    -. CAS latency (2 & 3)
    -. Burst length (1, 2, 4, 8)
    -. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation
• DQM (x4,x8) & L(U)DQM (x16) for masking
• Auto & self refresh
• 64ms refresh period (8K Cycle)


Pinout




Specifications

Parameter	Symbol	Value	Unit
Voltage on any pin relative to Vss	VIN, VOUT	-1.0 ~ 4.6	V
Voltage on VDD supply relative to Vss	VDD, VDDQ	-1.0 ~ 4.6	V
Storage temperature	TSTG	-55 ~ +150
Power dissipation	PD	1	W
Short circuit current	IOS	50	mA

Description

The K4S510432B / K4S510832B / K4S511632B is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 4 bits / 4 x 16,777,216 words by 8 bits / 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.