K4S281632E-TC75T00

The K4S281632E-TC75T00 is one member of the K4S281632E family which is designed as the 134,217,728 bits synchronous high data rate Dynamic RAM. Features of this K4S281632E-TC75T00 are:(1)JEDEC standard 3.3V power supply; (2)LVTTL compatible with multiplexed address; (3)four banks operation; (4)MRS cycle with address key programs: CAS latency (2 & 3), burst length (1, 2, 4, 8 & full page) and burst type (sequential & interleave); (5)all inputs are sampled at the positive going edge of the system clock.; (6)burst read single-bit write operation; (7)DQM (x4,x8) & L(U)DQM (x16) for masking; (8)Auto & self refresh; (9)64ms refresh period (4K Cycle).

The absolute maximum ratings of the K4S281632E-TC75T00 can be summarized as:(1)Voltage on any pin relative to Vss: -1.0 to 4.6 V;(2)Voltage on VDD supply relative to Vss: -1.0 to 4.6 V;(3)Storage temperature: -55 to +150 °C;(4)Power dissipation: 1 W;(5)Short circuit current: 50 mA.

The electrical characteristics of the K4S281632E-TC75T00 can be summarized as:(1)Operating current (One bank active): 90 mA;(2)Precharge standby current in power-down mode: 2 mA;(3)Precharge standby current in non power-down mode: 10 mA or 20 mA;(4)Active standby current in power-down mode: 5 mA;(5)Refresh current: 200 mA;(6)Operating current (Burst mode):110 mA. If you want to know more information such as the electrical characteristics about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .