Features: • JEDEC standard 3.3V power supply• LVTTL compatible with multiplexed address• Four banks operation• MRS cycle with address key programs-. CAS latency (2 & 3)-. Burst length (1, 2, 4, 8 & Full page)-. Burst type (Sequential & Interleave)• All inp...
K4S511632C: Features: • JEDEC standard 3.3V power supply• LVTTL compatible with multiplexed address• Four banks operation• MRS cycle with address key programs-. CAS latency (2 & 3)-....
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Features: • JEDEC standard 3.3V power supply• LVTTL compatible with multiplexed addres...
Features: • JEDEC standard 3.3V power supply• LVTTL compatible with multiplexed addres...
Features: • JEDEC standard 3.3V power supply• LVTTL compatible with multiplexed addres...
Parameter | Symbol | Value | Unit |
Voltage on any pin relative to Vss | VIN, VOUT | -1.0 ~ 4.6 | V |
Voltage on VDD supply relative to Vss | VDD, VDDQ | -1.0 ~ 4.6 | V |
Storage temperature | TSTG | -55 ~ +150 | |
Power dissipation | PD | 2 | W |
Short circuit current | IOS | 50 | mA |
The K4S511632C is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608words by 16bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.