Features: • TTL Compatible Output• Collector-Emitter Voltage : Min.50V• Current Transfer Ratio : Typ.100% (at IF=5mA, VCE=5V)• Electrical Isolation Voltage : AC5000Vrms• UL Recognized File No. E107486• K4N25G - No Base Connection,K4N25H - With Base ConnectionApp...
K4N25H: Features: • TTL Compatible Output• Collector-Emitter Voltage : Min.50V• Current Transfer Ratio : Typ.100% (at IF=5mA, VCE=5V)• Electrical Isolation Voltage : AC5000Vrms•...
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Parameter | Symbol | Rating | Unit | |
Input | Forward Current | IF | 50 | mA |
Reverse Voltage | VR | 5 | V | |
Peak Forward Current *1 | IFP | 1 | A | |
Power Dissipation | PD | 70 | mW | |
Output | Collector-Emitter Breakdown Voltage | BVCEO | 50 | V |
Emitter-Collector Breakdown Voltage | BVCEO | 6 | V | |
Collector-Base Breakdown Voltage** | BVCEO | 80 | V | |
Emitter-Base Breakdown Voltage** | BVCEO | 6 | V | |
Collector Current | IC | 50 | mA | |
Collector Power Dissipation | PC | 150 | mW | |
Input to Output Isolation Voltage*2 | Viso | AC5000 | Vrms | |
Storage Temperature | Tstg | -55~+125 | ||
Operating Temperature | Topr | -30~+100 | ||
Lead Soldering Temperature*3 | Tsol | 260 | ||
Total Power Dissipation | Ptot | 200 | mW |
** Except for K4N25G
*1. Input current with 100㎲ pulse width, 1% duty cycle
*2. Measured at RH=40~60% for 1min
*3. 1/16 inch form case for 10sec
These Photocouplers K4N25H cosist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin package.