Position: Home  > All Categories> Integrated Circuits (ICs) > K4S513233F

K4S513233F

Features: • 3.0V & 3.3V power supply.• LVCMOS compatible with multiplexed address.• Four banks operation.• MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).̶...

product image

K4S513233F Picture
See larger image
SeekIC No. : 004382925 Detail

K4S513233F: Features: • 3.0V & 3.3V power supply.• LVCMOS compatible with multiplexed address.• Four banks operation.• MRS cycle with address key programs. -. CAS latency (1, 2 &...

K4S513233F Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
K4S513233F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 3.0V & 3.3V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
   -. CAS latency (1, 2 & 3).
   -. Burst length (1, 2, 4, 8 & Full page).
   -. Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• Special Function Support.
   -. PASR (Partial Array Self Refresh).
   -. Internal TCSR (Temperature Compensated Self Refresh)
• DQM for masking.
• Auto refresh.
• 64ms refresh period (8K cycle).
• Commercial Temperature Operation (-25°C ~ 70°C).
• 2Chips DDP 90Balls FBGA ( -MXXX -Pb, -EXXX -Pb Free).


Specifications

Parameter Symbol Value Unit
Voltage on any pin relative to Vss VIN, VOUT -1.0 ~ 4.6 V
Voltage on VDD supply relative to Vss VDD, VDDQ -1.0 ~ 4.6 V
Storage temperature TSTG -55 ~ +150 °C
Power dissipation PD 1.0 W
Short circuit current IOS 50 mA



Description

The K4S513233F is 536,870,912 bits synchronous high data Date Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every
clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Tapes, Adhesives
803
AC452-2
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Optical Inspection Equipment
AA924
A21K4B
Transformers
TM-09210
BV222-1-00992
View more