K4S51163PF

Features:

*  1.8V power supply.
*  LVCMOS compatible with multiplexed address.
*  Four banks operation.
*  MRS cycle with address key programs.
     -. CAS latency (1, 2 & 3).
     -. Burst length (1, 2, 4, 8 & Full page).
     -. Burst type (Sequential & Interleave).
*  EMRS cycle with address key programs.
*  All inputs are sampled at the positive going edge of the system clock.
*  Burst read single-bit write operation.
*  Special Function Support.
     -. PASR (Partial Array Self Refresh).
     -. Internal TCSR (Temperature Compensated Self Refresh)
     -. DS (Driver Strength)
*  DQM for masking.
*  Auto refresh.
*  64ms refresh period (8K cycle).
* Commercial Temperature Operation (-25°C ~ 70°C).
* 1 /CS Support.
* 2Chips DDP 54Balls FBGA( -YXXX -Pb, -PXXX -Pb Free).


Specifications

Parameter	Symbol	Value	Unit
Voltage on any pin relative to Vss	VIN, VOUT	-1.0 ~2.6	V
Voltage on VDD supply relative to Vss	VDD, VDDQ	-1.0~2.6	V
Storage temperature	TSTG	-55~150	°C
Power dissipation	PD	1.0	W
Short circuit current	IOS	50	mA

Description

  The K4S51163PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every
clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications.