Features: • Switching Time - Typ. 3㎲• Collector-Emitter Voltage : Min.30V• Current Transfer Ratio : Typ.100% (at IF=10mA, VCE=10V)• Electrical Isolation Voltage : AC2500Vrms• UL Recognized File No. E107486Application• Interface between two circuits of dif...
K4N27: Features: • Switching Time - Typ. 3㎲• Collector-Emitter Voltage : Min.30V• Current Transfer Ratio : Typ.100% (at IF=10mA, VCE=10V)• Electrical Isolation Voltage : AC25...
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Parameter | Symbol | Rating | Unit | |
Input | Forward Current | IF | 80 | mA |
Reverse Voltage | VR | 5 | V | |
Peak Forward Current *1 | IFP | 3 | A | |
Power Dissipation | PD | 70 | mW | |
Output | Collector-Emitter Breakdown Voltage | BVCEO | 35 *4 | V |
Emitter-Collector Breakdown Voltage | BVCEO | 6 | V | |
Collector-Base Breakdown Voltage | BVCEO | 70 | V | |
Collector Current | IC | 100 | mA | |
Collector Power Dissipation | PC | 70 | mW | |
Input to Output Isolation Voltage*2 | Viso | AC1500 | Vrms | |
Storage Temperature | Tstg | -55~+125 | ||
Operating Temperature | Topr | -30~+100 | ||
Lead Soldering Temperature*3 | Tsol | 260 | ||
Total Power Dissipation | Ptot | 200 | mW |
*1. Input current with 100㎲ pulse width, 1% duty cycle
*2. Measured at RH=40~60% for 1min
*3. 1/16 inch form case for 10sec
*4. Customer Option
These Photocouplers K4N27 consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin package.