K4S161622H-UC60

The K4S161622H-UC60 is 16,777,216 bits synchronous high data rate Dynamic RAM and K4S161622H-UC60 is organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. The K4S161622H-UC60 allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

The K4S161622H-UC60 has many unique features: (1) 512K x 16Bit x 2 banks synchronous DRAM; (2) 3.3V power supply; (3) LVTTL compatible with multiplexed address; (4) dual banks operation; (5) all inputs are sampled at the positive going edge of the system clock; (6) burst read single-bit write operation; (7) DQM for masking; (8) auto & self refresh; (9) 15.6us refresh duty cycle (2K/32ms); (10) RoHS compliant; (11) Pb-free package.

There are some absolute maximum ratings about K4S161622H-UC60. (1): voltage on any pin relative to Vss(VIN, VOUT) is -1.0 V to 4.6 V; (2): voltage on VDD supply relative to Vss(VDD, VDDQ) is  -1.0 V to 4.6 V; (3): storage temperature(TSTG) is -55°C to  +150°C; (4): power dissipation(PD) is 1 W; (5): short circuit current(IOS) is 50 mA.

Otherwise,there are also some DC operating conditions of K4S161622H-UC60 (Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C))).(1): supply voltage(VDD, VDDQ) is 3.0 V min, 3.3 V typ and 3.6 V max; (2): input logic high votlage(VIH) is 2.0 V min, 3.0 V typ and VDDQ+0.3 V max; (3): input logic low voltage(VIL) is  -0.3 V min, 0 V typ and 0.8 V max; (4): output logic high voltage(VOH) is  2.4 V min when IOH is -2mA; (5): input leakage current(ILI) is -10  uA min and 10 uA max; (6): output logic low voltage(VOL) is 0.4 V max when IOL is 2mA.