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K4S643233F-SP

Features: • 3.0V & 3.3 power supply.• LVCMOS compatible with multiplexed address.• Four banks operation.• MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).̶...

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SeekIC No. : 004383044 Detail

K4S643233F-SP: Features: • 3.0V & 3.3 power supply.• LVCMOS compatible with multiplexed address.• Four banks operation.• MRS cycle with address key programs. -. CAS latency (1, 2 & ...

K4S643233F-SP Data Sheet

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Part Number:
K4S643233F-SP
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

•   3.0V & 3.3 power supply.
•   LVCMOS compatible with multiplexed address.
•   Four banks operation.
•   MRS cycle with address key programs.
          -. CAS latency (1, 2 & 3).
          -. Burst length (1, 2, 4, 8 & Full page).
          -. Burst type (Sequential & Interleave).
•   All inputs are sampled at the positive going edge of the system clock .
•   Burst read single-bit write operation.
•   DQM for masking.
•   Auto & self refresh.
•   64ms refresh period (4K cycle).
•   Extended temperature operation (-25°C to 85°C).
     Industrial temperature operation ( -40°C to 85°C).
•   90balls FBGA(-SXXX -Pb, -DXXX -Pb Free).


Specifications

Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VDD supply relative to Vss
VDD, VDDQ
-1.0 ~ 4.6
V
Storage temperature
TSTG
-55 ~ +150
°C
Power dissipation
PD
1
W
Short circuit current
IOS
50
mA
 


Description

The K4S643233F-SP is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology.Synchronous design of K4S643233F-SP allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle.Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications.




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