Features: • 1.8V power supply, 1.8V I/O power• Double-data-rate architecture; two data transfers per clock cycle• Bidirectional data strobe(DQS)• Four banks operation• Differential clock inputs(CK and CK)• MRS cycle with address key programs- CAS Latency ( 3 )- ...
K4X56163PE-L(F)G: Features: • 1.8V power supply, 1.8V I/O power• Double-data-rate architecture; two data transfers per clock cycle• Bidirectional data strobe(DQS)• Four banks operation• ...
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Features: • 1.8V power supply, 1.8V I/O power• Double-data-rate architecture; two data...
Features: • 1.8V power supply, 1.8V I/O power• Double-data-rate architecture; two data...
Parameter | Symbol | Value | Unit |
oltage on any pin relative to VSS | VIN, VOUT | -0.5 ~ 2.7 | V |
Voltage on VDD supply relative to VSS | VDD | -0.5 ~ 2.7 | V |
Voltage on VDDQ supply relative to VSS | VDDQ | -0.5 ~ 2.7 | V |
Storage temperature | TSTG | -55 ~ +150 | °C |
Power dissipation | PD | 1.0 | W |
Short circuit current | IOS | 50 | mA |
Note :
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.