Features: • Collector-Emitter Voltage : Min.35V• Current Transfer Ratio : Typ.500% (at IF=A1mA, VCE=2V)• Electrical Isolation Voltage : AC5000Vrms• Without Base Connection : K5640• With Base Connection : K5641• UL Recognized File No. E107486Application• In...
K5641: Features: • Collector-Emitter Voltage : Min.35V• Current Transfer Ratio : Typ.500% (at IF=A1mA, VCE=2V)• Electrical Isolation Voltage : AC5000Vrms• Without Base Connection : ...
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Parameter | Symbol | Rating | Unit | |
Input | Forward Current | IF | ±60 | mA |
Junction Temperature | TJ | 125 | ||
Peak Forward Current *1 | IFP | ±1 | A | |
Power Dissipation | PD | 150 | mW | |
Output | Collector-Emitter Breakdown Voltage | BVCEO | 35 | V |
Emitter-Collector Breakdown Voltage | BVCEO | 6 | V | |
Collector-Base Breakdown Voltage** | BVCEO | 35 | V | |
Collector Current | IC | 50 | mA | |
Collector Power Dissipation | PC | 150 | mW | |
Input to Output Isolation Voltage*2 | Viso | AC5000 | Vrms | |
Storage Temperature | Tstg | -55~+125 | ||
Operating Temperature | Topr | -30~+100 | ||
Lead Soldering Temperature*3 | Tsol | 260 | ||
Total Power Dissipation | Ptot | 200 | mW |
** Except for K5610
*1. Input current with 100㎲ pulse width, 1% duty cycle
*2. Measured at RH=40~60% for 1min
*3. 1/16 inch form case for 10sec
These Photocouplers K5641 consist of two Gallium Arsenide Infrared Emitting Diodes and a Silicon NPN Phototransistor in a 6-pin package.