K5T6432YT(B)M

Notes :
1. Minimum DC voltage is -0.5V on input / output pins. During transitions, the level may undershoot to -2.0V for periods <20ns.
Maximum DC voltage on input / output pins is F-Vcc+0.5V which, during transitions, may overshoot to F-Vcc+1.5V for periods <20ns.

The K5T6432YT(B)M featuring single 3.0V power supply is a Multi Chip Package Memory which combines 64Mbit Four Bank Flash and 32Mbit UtRAM.

The 64Mbit Flash memory K5T6432YT(B)M  is organized as 4M x16 bit and 32Mbit UtRAM is organized as 2M x16 bit. The 64Mbit Flash memory K5T6432YT(B)M is the high performance non-volatile memory fabricated by CMOS technology for peripheral circuit and DINOR IV(Diveded bit-line NOR IV) architecture for the memory cell. All memory blocks are locked and can be programmed or erased, when F-WP is low.Using Software Lock Release function, program erase operation can be executed.
 
The 32Mbit UtRAM K5T6432YT(B)M  is fabricated by SAMSUNG's advanced CMOS technology using one transistor memory cell.

The K5T6432YT(B)M  also supports deep power down mode for low standby current. The K5T6432YT(B)M  is suitable for use in program and data memory of mobile communication system to reduce mount area. This device is available in 81-ball TBGA Type package.