MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:09+
FQU12N20TU, FQU12P10, FQU13N06TU Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: N/A
D/C: 09+
Description: MOSFET N-CH 60V 10A IPAK
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PDF/DataSheet Download
Datasheet: FQU10N20
File Size: 806148 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQU12P10
File Size: 639654 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQU10N20
File Size: 806148 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FQU12N20TU |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 9A |
| Rds On (Max) @ Id, Vgs | 280 mOhm @ 4.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 910pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 23nC @ 10V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQU12N20TU FQU12N20TU |
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
|
Symbol |
Parameter |
FQD12P10 / FQU12P10 |
Units | |
|
VDSS |
Drain-Source Voltage |
-100 |
V | |
|
ID |
Drain Current |
- Continuous (TC =25°C) |
-9.6 |
A |
|
|
- Continuous (TC = 100°C) |
-6.0 |
A | |
|
IDM |
Drain Current Pulsed (Note 1) |
-37.5 |
A | |
|
VGSS |
Gate-Source Voltage |
± 30 |
V | |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
370 |
mJ | |
|
IAR |
Avalanche Current (Note 1) |
-9.4 |
A | |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
5.0 |
mJ | |
|
d v/dt |
Peak Diode Recovery dv/dt (Note 3) |
-6.0 |
V/ns | |
|
PD |
Power Dissipation (TA = 25°C) |
2.5 |
W | |
|
Power Dissipation (TC = 25°C) |
50 |
W | ||
|
- Derate above 25°C |
0.4 |
W/°C | ||
|
TJ, TSTG |
Operating and |
-55 to +150 |
°C | |
|
TL |
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C | |
| Technical/Catalog Information | FQU13N06TU |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 10A |
| Rds On (Max) @ Id, Vgs | 140 mOhm @ 5A, 10V |
| Input Capacitance (Ciss) @ Vds | 310pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 7.5nC @ 10V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQU13N06TU FQU13N06TU |
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