FQU10N20C

Features: • 7.8A, 200V, RDS(on) = 0.36Ω @VGS = 10 V• Low gate charge ( typical 20 nC)• Low Crss ( typical 40.5 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQD10N20C / FQU10N20C Units ...

product image

FQU10N20C Picture
SeekIC No. : 004343346 Detail

FQU10N20C: Features: • 7.8A, 200V, RDS(on) = 0.36Ω @VGS = 10 V• Low gate charge ( typical 20 nC)• Low Crss ( typical 40.5 pF)• Fast switching• 100% avalanche tested• I...

floor Price/Ceiling Price

Part Number:
FQU10N20C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 7.8A, 200V, RDS(on) = 0.36Ω @VGS = 10 V
• Low gate charge ( typical 20 nC)
• Low Crss ( typical 40.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability



Specifications

Symbol Parameter
FQD10N20C / FQU10N20C
Units
VDSS Drain-Source Voltage
200
V
ID Drain Current  - Continuous (TC = 25°C)
                       - Continuous (TC = 100°C)
7.8
A
5.0
A
IDM Drain Current - Pulsed (Note 1)
31.2
A
VGSS Gate-Source Voltage
± 30
V
EAS Single Pulsed Avalanche Energy (Note 2)
210
mJ
IAR Avalanche Current (Note 1)
7.8
A
EAR Repetitive Avalanche Energy (Note 1)
5.0
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
5.5
V/ns
PD Power Dissipation (TC = 25°C)
                      - Derate above 25°C
50
W
0.4
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+150
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.2mH, IAS = 7.8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 9.5A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature



Description

These N-Channel enhancement mode power field effect transistors of FQU10N20C are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology of FQU10N20C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQU10N20C is well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for interrupted power supplies and motor controls.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
RF and RFID
Line Protection, Backups
Cables, Wires - Management
Transformers
View more