FQU10N20C

Features: • 7.8A, 200V, RDS(on) = 0.36Ω @VGS = 10 V• Low gate charge ( typical 20 nC)• Low Crss ( typical 40.5 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQD10N20C / FQU10N20C Units ...

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SeekIC No. : 004343346 Detail

FQU10N20C: Features: • 7.8A, 200V, RDS(on) = 0.36Ω @VGS = 10 V• Low gate charge ( typical 20 nC)• Low Crss ( typical 40.5 pF)• Fast switching• 100% avalanche tested• I...

floor Price/Ceiling Price

Part Number:
FQU10N20C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• 7.8A, 200V, RDS(on) = 0.36Ω @VGS = 10 V
• Low gate charge ( typical 20 nC)
• Low Crss ( typical 40.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability



Specifications

Symbol Parameter
FQD10N20C / FQU10N20C
Units
VDSS Drain-Source Voltage
200
V
ID Drain Current  - Continuous (TC = 25°C)
                       - Continuous (TC = 100°C)
7.8
A
5.0
A
IDM Drain Current - Pulsed (Note 1)
31.2
A
VGSS Gate-Source Voltage
± 30
V
EAS Single Pulsed Avalanche Energy (Note 2)
210
mJ
IAR Avalanche Current (Note 1)
7.8
A
EAR Repetitive Avalanche Energy (Note 1)
5.0
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
5.5
V/ns
PD Power Dissipation (TC = 25°C)
                      - Derate above 25°C
50
W
0.4
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+150
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.2mH, IAS = 7.8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 9.5A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature



Description

These N-Channel enhancement mode power field effect transistors of FQU10N20C are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology of FQU10N20C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQU10N20C is well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for interrupted power supplies and motor controls.




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