Features: • 7.8A, 200V, RDS(on) = 0.36Ω @VGS = 10 V• Low gate charge ( typical 20 nC)• Low Crss ( typical 40.5 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQD10N20C / FQU10N20C Units ...
FQU10N20C: Features: • 7.8A, 200V, RDS(on) = 0.36Ω @VGS = 10 V• Low gate charge ( typical 20 nC)• Low Crss ( typical 40.5 pF)• Fast switching• 100% avalanche tested• I...
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Symbol | Parameter |
FQD10N20C / FQU10N20C |
Units |
VDSS | Drain-Source Voltage |
200 |
V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
7.8 |
A |
5.0 |
A | ||
IDM | Drain Current - Pulsed (Note 1) |
31.2 |
A |
VGSS | Gate-Source Voltage |
± 30 |
V |
EAS | Single Pulsed Avalanche Energy (Note 2) |
210 |
mJ |
IAR | Avalanche Current (Note 1) |
7.8 |
A |
EAR | Repetitive Avalanche Energy (Note 1) |
5.0 |
mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns |
PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
50 |
W |
0.4 |
W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power field effect transistors of FQU10N20C are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology of FQU10N20C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQU10N20C is well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for interrupted power supplies and motor controls.