Features: • 7.6A, 200V, RDS(on) = 0.36 @VGS = 10 V• Low gate charge ( typical 13 nC)• Low Crss ( typical 14 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• Low level gate drive requirement allowing direct operation from logic drivers...
FQU10N20L: Features: • 7.6A, 200V, RDS(on) = 0.36 @VGS = 10 V• Low gate charge ( typical 13 nC)• Low Crss ( typical 14 pF)• Fast switching• 100% avalanche tested• Improved d...
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Symbol |
Parameter |
FQD10N20L / FQU10N20L |
Units | |
VDSS |
Drain-Source Voltage |
200 |
V | |
ID |
Drain Current |
- Continuous (TC =25°C) |
7.6 |
A |
|
- Continuous (TC = 100°C) |
4.8 |
A | |
IDM |
Drain Current Pulsed (Note 1) |
30.4 |
A | |
VGSS |
Gate-Source Voltage |
± 20 |
V | |
EAS |
Single Pulsed Avalanche Energy (Note 2) |
180 |
mJ | |
IAR |
Avalanche Current (Note 1) |
7.6 |
A | |
EAR |
Repetitive Avalanche Energy (Note 1) |
5.1 |
mJ | |
d v/dt |
Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns | |
PD |
Power Dissipation (TA = 25°C) |
2.5 |
W | |
Power Dissipation (TC = 25°C) |
51 |
W | ||
- Derate above 25°C |
0.4 |
W/°C | ||
TJ, TSTG |
Operating and |
-55 to +150 |
°C | |
TL |
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power field effect transistors of FQU10N20L are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. FQU10N20L is well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control.