FQU1P50TU, FQU20N06, FQU2N100 Selling Leads, Datasheet
MFG:FAIRCHILD Package Cooled:. D/C:09+
FQU1P50TU, FQU20N06, FQU2N100 Datasheet download
Part Number: FQU1P50TU
MFG: FAIRCHILD
Package Cooled: .
D/C: 09+
FQU1P50TU, FQU20N06, FQU2N100
- Table of contents:
Info of FQU1P50TU
Info of FQU20N06
Info of FQU2N100
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About FQU10N20
PDF/DataSheet Download
Datasheet: FQU10N20
File Size: 806148 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQU20N06
PDF/DataSheet Download
Datasheet: FQU20N06
File Size: 676487 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQU2N100
PDF/DataSheet Download
Datasheet: FQU2N100
File Size: 637278 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FQU20N06 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
FQU20N06 Maximum Ratings
| Symbol | Parameter | FQD20N06 /FQU20N06 | Units |
| VDSS | Drain-Source Voltage | 60 | V |
| ID | Drain Current - Continuous (TC = 25) - Continuous (TC = 100) |
16.8 | A |
| 10.6 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 67.2 | A |
| VGSS | Gate-Source Voltage | ±25 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 155 | mJ |
| IAR | Avalanche Current (Note 1) | 16.8 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 3.8 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 7.0 | V/ns |
| PD | Power Dissipation (TA = 25) * | 2.5 | W |
| Power Dissipation (TC = 25) - Derate above 25 |
38 | W | |
| 0.30 | W/ | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | |
| TL | Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds |
300 |
FQU20N06 Features
• 16.8A, 60V, RDS(on) = 0.063Ω @ VGS = 10V
• Low gate charge ( typical 11.5 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 150 maximum junction temperature rating
• Low gate charge ( typical 11.5 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 150 maximum junction temperature rating
FQU2N100 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp starter and ballast.
FQU2N100 Maximum Ratings
|
Symbol |
Parameter |
FQD2N100/FQU2N100 |
Units | |
|
VDSS |
Drain-Source Voltage |
1000 |
V | |
|
ID |
Drain Current |
- Continuous (TC =25°C) |
1.6 |
A |
|
|
- Continuous (TC = 100°C) |
1.0 |
A | |
|
IDM |
Drain Current Pulsed (Note 1) |
6.4 |
A | |
|
VGSS |
Gate-Source Voltage |
±30 |
V | |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
160 |
mJ | |
|
IAR |
Avalanche Current (Note 1) |
1.6 |
A | |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
5.0 |
mJ | |
|
d v/dt |
Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns | |
|
PD |
Power Dissipation (TA = 25°C) |
2.5 |
W | |
|
Power Dissipation (TC = 25°C) |
50 |
W | ||
|
- Derate above 25°C |
0.4 |
W/°C | ||
|
TJ, TSTG |
Operating and |
-55 to +150 |
°C | |
|
TL |
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C | |
FQU2N100 Features
• 1.6A, 1000V, RDS(on) = 9 @VGS = 10 V
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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